P Channel MOSFET Siliup SP60P140T1 60V Drain Source Voltage 1.8A Current SOT 23 3L Package Component
Key Attributes
Model Number:
SP60P140T1
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
140mΩ@10V;160mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
19pF
Number:
1 P-Channel
Output Capacitance(Coss):
28pF
Input Capacitance(Ciss):
455pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SP60P140T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP60P140T1 is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-3L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-23-3L
- Marking Code: 6P14
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | -10V | 140 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | -4.5V | 160 | m | ||
| Continuous Drain Current | ID | -1.8 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -1.8 | A | |||
| Pulse Drain Current | IDM | Tested | -7.2 | A | ||
| Power Dissipation | PD | 1.2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 104 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -1 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID =-1.5A | 140 | 180 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID =-1A | 160 | 200 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 455 | pF | ||
| Output Capacitance | Coss | 28 | ||||
| Reverse Transfer Capacitance | Crss | 19 | ||||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-1.5A | 9 | nC | ||
| Gate-Source Charge | Qgs | 1.5 | ||||
| Gate-Drain Charge | Qg d | 2 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-30V VGS=-10V , RG=10 , ID=-1.5A | 40 | nS | ||
| Turn-On Rise Time | tr | 36 | ||||
| Turn-Off Delay Time | td(off) | 15 | ||||
| Turn-Off Fall Time | tf | 10 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-23-3L) | ||||||
| Symbol | Dimensions in millimeters | Min. | Max. | |||
| A | 1.050 | 1.250 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 1.050 | 1.150 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.100 | 0.200 | ||||
| D | 2.820 | 3.020 | ||||
| E1 | 1.500 | 1.700 | ||||
| E | 2.650 | 2.950 | ||||
| e | 0.950 | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.300 | 0.600 | ||||
| 0 | 8 | |||||
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP60P140T1 | SOT-23-3L | 3000 |
2504101957_Siliup-SP60P140T1_C41354821.pdf
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