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quality Compact P Channel MOSFET Siliup SP20P35T1 20V Device in SOT 23 3L Package for DC DC Converter Designs factory
quality Compact P Channel MOSFET Siliup SP20P35T1 20V Device in SOT 23 3L Package for DC DC Converter Designs factory

Compact P Channel MOSFET Siliup SP20P35T1 20V Device in SOT 23 3L Package for DC DC Converter Designs

Key Attributes
Model Number: SP20P35T1
Product Custom Attributes
Pd - Power Dissipation:
1.2W
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@4.5V;45mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
113pF
Number:
1 P-Channel
Output Capacitance(Coss):
127pF
Input Capacitance(Ciss):
960pF
Gate Charge(Qg):
9.7nC@4.5V
Mfr. Part #:
SP20P35T1
Package:
SOT-23-3L
Product Description

Product Overview

The SP20P35T1 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-3L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: P-Channel MOSFET
  • Package: SOT-23-3L
  • Device Code: 20P35

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
RDS(on) @ -4.5V 35 m
RDS(on) @ -2.5V 45 m
Continuous Drain Current ID -4.5 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID -4.5 A
Pulse Drain Current IDM Tested -18 A
Power Dissipation PD 1.2 W
Thermal Resistance Junction-to-Ambient RJA 104 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -20 - - V
Drain-Source Leakage Current IDSS VDS=-16V , VGS=0V - - -1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -0.4 -0.75 -0.9 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-3.3A - 35 57 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V, ID=-2.8A - 45 76 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz - 686 - pF
Output Capacitance Coss - 90.8 -
Reverse Transfer Capacitance Crss - 80.4 -
Total Gate Charge Qg VDS=-15V , VGS=-4.5V , ID=-3A - 9.7 - nC
Gate-Source Charge Qgs - 2.05 -
Gate-Drain Charge Qgd - 2.43 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=-10V VGS=-4.5V , RG=3.3, ID=3A, - 4.8 - nS
Turn-On Rise Time tr - 9.6 -
Turn-Off Delay Time td(off) - 52 -
Turn-Off Fall Time tf - 8.4 -
Source-Drain Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 - - -1.2 V
Package Information (SOT-23-3L)
Symbol Dimensions in millimeters Min. Max.
A 1.050 1.250
A1 0.000 0.100
A2 1.050 1.150
b 0.300 0.500
c 0.100 0.200
D 2.820 3.020
E 1.500 1.700
E1 2.650 2.950
e 0.950
e1 1.800 2.000
L 0.300 0.600
0 8

2504101957_Siliup-SP20P35T1_C41354950.pdf

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