N Channel MOSFET with 20V Breakdown Voltage and 7A Continuous Current Siliup SP3416KT1 Surface Mount
Key Attributes
Model Number:
SP3416KT1
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@4.5V;17mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
89pF
Number:
1 N-channel
Output Capacitance(Coss):
105pF
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
545pF
Gate Charge(Qg):
8nC@4.5V
Mfr. Part #:
SP3416KT1
Package:
SOT-23-3L
Product Description
Product Overview
The SP3416KT1 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high power and current handling capability, a surface mount package, and ESD protection up to 2KV. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package: SOT-23-3L
- Device Code: 3416
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 20 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @4.5V | 13 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | @2.5V | 17 | m | ||
| Continuous Drain Current | ID | 7 | A | |||
| Features | ||||||
| High power and current handing capability | ||||||
| Surface mount package | ||||||
| ESD protected 2KV | ||||||
| Application | ||||||
| Battery Switch | ||||||
| DC/DC Converter | ||||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 7 | A | |||
| Pulse Drain Current | IDM | Tested | 28 | A | ||
| Power Dissipation | PD | 1 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 125 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.4 | 0.65 | 1.1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=7A | - | 13 | 18 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=4A | - | 17 | 22 | m |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 545 | - | pF |
| Output Capacitance | Coss | - | 105 | - | ||
| Reverse Transfer Capacitance | Crss | - | 89 | - | ||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=5A | - | 8 | - | nC |
| Gate-Source Charge | Qgs | - | 2.4 | - | ||
| Gate-Drain Charge | Qg | - | 3 | - | ||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=3 , RL=1.5 | - | 0.5 | - | nS |
| Turn-On Rise Time | tr | - | 1.2 | - | ||
| Turn-Off Delay Time | td(off) | - | 11 | - | ||
| Turn-Off Fall Time | tf | - | 4 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-23-3L Package Information | |||
|---|---|---|---|
| Symbol | Dimensions in millimeters | Min. | Max. |
| A | 1.050 | 1.250 | |
| A1 | 0.000 | 0.100 | |
| A2 | 1.050 | 1.150 | |
| b | 0.300 | 0.500 | |
| c | 0.100 | 0.200 | |
| D | 2.820 | 3.020 | |
| E | 1.500 | 1.700 | |
| E1 | 2.650 | 2.950 | |
| e | (Typ.) | 0.950 | |
| e1 | 1.800 | 2.000 | |
| L | 0.300 | 0.600 | |
| 0 | 8 | ||
2504101957_Siliup-SP3416KT1_C41354923.pdf
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