N Channel MOSFET Siliup SP2302T2 20V 3.5A Continuous Drain Current and Low On Resistance for Power Management
Key Attributes
Model Number:
SP2302T2
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@4.5V;33mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
300pF
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
SP2302T2
Package:
SOT-23
Product Description
Product Overview
The SP2302T2 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a typical RDS(on) of 28m at 4.5V and a continuous drain current of 3.5A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package: SOT-23
- Device Code: 2302
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| RDS(on) | @4.5V | 28 | m | |||
| RDS(on) | @2.5V | 33 | m | |||
| Continuous Drain Current | ID | 3.5 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 3.5 | A | |||
| Pulse Drain Current | IDM | Tested | 14 | A | ||
| Power Dissipation | PD | 0.8 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 156 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.55 | 0.7 | 1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =3.6A | - | 28 | 45 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID =3.1A | - | 33 | 60 | m |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 300 | - | pF |
| Output Capacitance | Coss | - | 120 | - | ||
| Reverse Transfer Capacitance | Crss | - | 80 | - | ||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=3.6A | - | 4.0 | - | nC |
| Gate-Source Charge | Qgs | - | 0.65 | - | ||
| Gate-Drain Charge | Qgd | - | 1.5 | - | ||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=6, ID=3.6A | - | 7 | - | nS |
| Turn-On Rise Time | tr | - | 55 | - | ||
| Turn-Off Delay Time | td(off) | - | 16 | - | ||
| Turn-Off Fall Time | tf | - | 10 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-23 Package Information | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | REF. | 0.95 | ||||
| e1 | 1.80 | 2.00 | ||||
| L | REF. | 0.55 | ||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP2302T2_C41354906.pdf
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