Siliup SP77MF65TF 650V MOSFET Featuring Low RDSon and High Frequency Switching for PWM Applications
Key Attributes
Model Number:
SP77MF65TF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
77A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Output Capacitance(Coss):
340pF
Input Capacitance(Ciss):
6.2nF
Pd - Power Dissipation:
400W
Gate Charge(Qg):
294nC@10V
Mfr. Part #:
SP77MF65TF
Package:
TO-247
Product Description
Product Overview
The SP77MF65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency applications, it features fast switching characteristics, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard-switched and high-frequency circuits, and power management systems. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP77MF65
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 650 | V | |||
| RDS(on) | RDS(on) | 10V | 35 | m | ||
| Continuous Drain Current | ID | 77 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 650 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 30 | V | ||
| Continuous Drain Current (Tc=25) | ID | 77 | A | |||
| Continuous Drain Current (Tc=100) | ID | 45 | A | |||
| Pulsed Drain Current | IDM | 308 | A | |||
| Single Pulse Avalanche Energy | EAS | 1950 | mJ | |||
| Power Dissipation (Tc=25) | PD | 400 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.31 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 480V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 3 | 4 | 5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 35A | - | 35 | 41 | m |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 6200 | - | pF |
| Output Capacitance | Coss | - | 340 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 14 | - | pF | |
| Total Gate Charge | Qg | VDS=480V , VGS=10V , ID=35A | - | 294 | - | nC |
| Gate-Source Charge | Qgs | - | 55 | - | ||
| Gate-Drain Charge | Qgd | - | 190 | - | ||
| Turn-On Delay Time | Td(on) | VDD=480V, VGS=10V , RG=20, ID=35A | - | 39 | - | nS |
| Rise Time | Tr | - | 20 | - | ||
| Turn-Off Delay Time | Td(off) | - | 90 | - | nS | |
| Fall Time | Tf | - | 5 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 77 | A | |
| Reverse recover time | Trr | IS=35A, di/dt=100A/us, Tj=25 | - | 256 | - | nS |
| Reverse recovery charge | Qrr | - | 18 | - | uC | |
| Package Information (TO-247) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.850 | 5.150 | 0.191 | 0.200 | ||
| A1 | 2.200 | 2.600 | 0.087 | 0.102 | ||
| b2 | 1.800 | 2.200 | 0.071 | 0.087 | ||
| b | 1.000 | 1.400 | 0.039 | 0.055 | ||
| b1 | 2.800 | 3.200 | 0.110 | 0.126 | ||
| c | 0.500 | 0.700 | 0.020 | 0.028 | ||
| c1 | 1.900 | 2.100 | 0.075 | 0.083 | ||
| D | 15.450 | 15.750 | 0.608 | 0.620 | ||
| E1 | 3.500 REF. | 0.138 REF. | ||||
| E2 | 3.600 REF. | 0.142 REF. | ||||
| L | 40.900 | 41.300 | 1.610 | 1.626 | ||
| L1 | 24.800 | 25.100 | 0.976 | 0.988 | ||
| L2 | 20.300 | 20.600 | 0.799 | 0.811 | ||
| 7.100 | 7.300 | 0.280 | 0.287 | |||
| e | 5.450 TYP. | 0.215 TYP. | ||||
| H1 | 5.980 REF. | 0.235 REF. | ||||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
2504101957_Siliup-SP77MF65TF_C22466840.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
