N Channel Power MOSFET 150V Siliup SP015N09GHTD Featuring Split Gate Trench Technology for Switching

Name: N Channel Power MOSFET 150V Siliup SP015N09GHTD Featuring Split Gate Trench Technology for Switching
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: SP015N09GHTD
Availability: InStock

Key Attributes

Model Number: SP015N09GHTD

Product Custom Attributes

Drain To Source Voltage:

150V

Current - Continuous Drain(Id):

90A

RDS(on):

9mΩ@10V

Operating Temperature -:

-55℃~+150℃

Gate Threshold Voltage (Vgs(th)):

3V@250uA

Reverse Transfer Capacitance (Crss@Vds):

9pF

Number:

1 N-channel

Output Capacitance(Coss):

268pF

Pd - Power Dissipation:

180W

Input Capacitance(Ciss):

3.31nF

Gate Charge(Qg):

30nC@10V

Mfr. Part #:

SP015N09GHTD

Package:

TO-263-3L

Product Description

Product Overview

The SP015N09GHTD is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low R_DS(on). This MOSFET is ideal for PWM applications, hard switched and high-frequency circuits, and power management solutions. It is 100% tested for single pulse avalanche energy.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 015N09GH
Package: TO-263
Channel Type: N-Channel
Technology: Split Gate Trench Technology

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Product Summary
V_(BR)DSS				150		V
R_DS(on)		10V		9		m
ID				90		A
Absolute Maximum Ratings
Drain-Source Voltage	V_DS				150	V
Gate-Source Voltage	V_GS				20	V
Continuous Drain Current (Tc=25)	I_D				90	A
Continuous Drain Current (Tc=100)	I_D				60	A
Pulsed Drain Current	I_DM				360	A
Single Pulse Avalanche Energy¹	E_AS				462	mJ
Power Dissipation (Tc=25)	P_D				180	W
Thermal Resistance Junction-to-Case	R_JC				0.69	/W
Storage Temperature Range	T_STG		-55		150
Operating Junction Temperature Range	T_J		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	B_VDSS	I_D = 250A, V_GS = 0V	150	-	-	V
Drain Cut-Off Current	I_DSS	V_DS = 120V, V_GS = 0V	-	-	1	A
Gate Leakage Current	I_GSS	V_GS = 20V, V_DS = 0V	-	-	0.1	A
Gate Threshold Voltage	V_GS(th)	V_DS = V_GS, I_D = 250A	2.0	3.0	4.0	V
Drain-Source ON Resistance	R_DS(ON)	V_GS = 10V, I_D = 20A	-	9	12	m
Dynamic Characteristics
Input Capacitance	C_iss	V_DS=75V , V_GS=0V , f=1MHz	-	3310	-	pF
Output Capacitance	C_oss		-	268	-	pF
Reverse Transfer Capacitance	C_rss		-	9	-	pF
Total Gate Charge	Q_g	V_DS=75V , V_GS=10V , I_D=20A	-	30	-	nC
Gate-Source Charge	Q_gs		-	17.8	-
Gate-Drain Charge	Q_gd		-	7	-
Switching Characteristics
Turn-On Delay Time	t_d(on)	V_DD=75V , V_GS=10V , R_G=6 I_D=20A	-	13	-	nS
Rise Time	t_r		-	25	-
Turn-Off Delay Time	t_d(off)		-	31	-
Fall Time	t_f		-	25	-
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage	V_SD	I_S = 1A, V_GS = 0V	-	-	1.2	V
Maximum Body-Diode Continuous Current	I_S		-	-	90	A
Reverse Recovery Time	t_rr	I_S=20A, di/dt=200A/us, T_J=25	-	78	-	nS
Reverse Recovery Charge	Q_rr		-	185	-	nC

Note: 1. The test condition is V_DD=50V,V_GS=10V,L=0.5mH,R_G=25

Package Information

TO-263 Package Dimensions

Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	4.470	4.670	0.176	0.184
A1	0.000	0.150	0.000	0.006
B	1.120	1.420	0.044	0.056
b	0.710	0.910	0.028	0.036
b1	1.170	1.370	0.046	0.054
c	0.310	0.530	0.012	0.021
c1	1.170	1.370	0.046	0.054
D	10.010	10.310	0.394	0.406
E	8.500	8.900	0.335	0.350
e	2.540 TYP.		0.100 TYP.
e1	4.980	5.180	0.196	0.204
L	14.940	15.500	0.588	0.610
L1	4.950	5.450	0.195	0.215
L2	2.340	2.740	0.092	0.108
L3	1.300	1.700	0.051	0.067
	0	8	0	8
V	5.600 REF.		0.220 REF.

Order Information

Device	Package	Unit/Tape
SP015N09GHTD	TO-263	800

2504101957_Siliup-SP015N09GHTD_C22466808.pdf

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