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quality High Speed Switching 120V N Channel MOSFET Siliup SP012N03BGHTQ Suitable for Power Management Systems factory
quality High Speed Switching 120V N Channel MOSFET Siliup SP012N03BGHTQ Suitable for Power Management Systems factory

High Speed Switching 120V N Channel MOSFET Siliup SP012N03BGHTQ Suitable for Power Management Systems

Key Attributes
Model Number: SP012N03BGHTQ
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 N-channel
Output Capacitance(Coss):
835pF
Input Capacitance(Ciss):
5.64nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
SP012N03BGHTQ
Package:
TO-220-3L
Product Description

Product Overview

The SP012N03BGHTQ is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-speed power switching applications, this MOSFET features fast switching, low gate charge, and low Rdson. Its low reverse transfer capacitances and 100% single pulse avalanche energy test make it suitable for DC-DC converters and power management systems. The device comes in a TO-220-3L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP012N03BGH
  • Package: TO-220-3L (1:G 2:D 3:S)

Technical Specifications

Parameter Symbol Rating Unit Test Condition
Product Summary
V(BR)DSS 120 V
RDS(on)TYP 4 m @10V
ID 180 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 120 V (Ta=25 unless otherwise noted)
Gate-Source Voltage VGS 20 V (Ta=25 unless otherwise noted)
Continuous Drain Current ID 180 A (Tc=25)
Continuous Drain Current ID 120 A (Tc=100)
Pulsed Drain Current IDM 720 A
Single Pulse Avalanche Energy EAS 900 mJ 1
Power Dissipation PD 230 W (Tc=25)
Thermal Resistance Junction-to-Case RJC 0.54 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS 120 V ID = 250A, VGS = 0V
Drain Cut-Off Current IDSS 1 A VDS = 96V, VGS = 0V
Gate Leakage Current IGSS 0.1 A VGS = 20V, VDS = 0V
Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 V VDS = VGS, ID = 250A
Drain-Source ON Resistance RDS(ON) 4 5 m VGS = 10V, ID = 50A
Dynamic Characteristics
Input Capacitance Ciss 5640 pF VDS = 60V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 835 pF
Reverse Transfer Capacitance Crss 13 pF
Total Gate Charge Qg 152 nC VDS=60V , VGS=10V , ID=75A
Gate-Source Charge Qgs 43 nC
Gate-Drain Charge Qg 46 nC
Switching Characteristics
Turn-On Delay Time td(on) 25 nS VGS = 10V, VDS = 50V, ID = 75A, RG = 1.6
Rise Time tr 15 nS
Turn-Off Delay Time td(off) 52 nS
Fall Time tf 18 nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD 1.2 V IS = 1A, VGS = 0V
Maximum Body-Diode Continuous Current IS 180 A
Reverse Recovery Time Trr 92 nS IS=100A, di/dt=100A/us, TJ=25
Reverse Recovery Charge Qrr 183 nC
Package Information (TO-220-3L)
Symbol Dimensions In Millimeters (Min. Max.) Dimensions In Inches (Min. Max.)
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

2504101957_Siliup-SP012N03BGHTQ_C22385396.pdf

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