Power MOSFET Siliup SP40N05GDNK 40V Dual N Channel Device for DC DC Converters and Motor Control Applications
Key Attributes
Model Number:
SP40N05GDNK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
45A
RDS(on):
5mΩ@10V;8mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Number:
2 N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12.1pF
Output Capacitance(Coss):
478pF
Pd - Power Dissipation:
92W
Input Capacitance(Ciss):
885pF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
SP40N05GDNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP40N05GDNK is a 40V Dual N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features advanced split gate trench technology, offering fast switching, low gate charge, and low RDS(on). This MOSFET is designed for applications such as DC-DC converters and motor control. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP40N05GDNK
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Product Summary | |||
| V(BR)DSS | 40 | V | |
| RDS(on)TYP | 5m@10V / 8m@4.5V | ||
| ID | 45 | A | |
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | |||
| Drain-Source Voltage | VDS | 40 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current (Tc=25C) | ID | 45 | A |
| Continuous Drain Current (Tc=100C) | ID | 30 | A |
| Pulse Drain Current | IDM | 180 | A |
| Power Dissipation (Tc=25C) | PD | 92 | W |
| Single pulsed avalanche energy | EAS | 110 | mJ |
| Thermal Resistance Junction-to-Case | RJC | 1.35 | C/W |
| Storage Temperature Range | TSTG | -55 to 150 | C |
| Operating Junction Temperature Range | TJ | -55 to 150 | C |
| Electrical Characteristics (Ta=25, unless otherwise noted) | |||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V |
| Drain-Source Leakage Current | IDSS | - | 1 uA |
| Gate-Source Leakage Current | IGSS | - | 100 nA |
| Gate Threshold Voltage | VGS(th) | 1 to 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | 5.0 to 6.3 | m |
| Input Capacitance | Ciss | 885 | pF |
| Output Capacitance | Coss | 478 | pF |
| Reverse Transfer Capacitance | Crss | 12.1 | pF |
| Total Gate Charge | Qg | 35 | nC |
| Gate-Source Charge | Qgs | 6.4 | nC |
| Gate-Drain Charge | Qgd | 3.5 | nC |
| Turn-On Delay Time | Td(on) | 8 | nS |
| Rise Time | Tr | 5 | nS |
| Turn-Off Delay Time | Td(off) | 24 | nS |
| Fall Time | Tf | 3.5 | nS |
| Diode Forward Voltage | VSD | - | 1.2 V |
| Maximum Body-Diode Continuous Current | IS | - | 55 A |
| Reverse Recovery Time | Trr | 14 | nS |
| Reverse Recovery Charge | Qrr | 16 | nC |
| Package Information (PDFN5X6-8L) | |||
| Dimension | Symbol | Min. | Max. |
| A | A | 0.900 | 1.000 |
| A3 | A3 | 0.254 REF. | 0.010REF. |
| D | D | 4.944 | 5.096 |
| E | E | 5.974 | 6.126 |
| D1 | D1 | 1.470 | 1.870 |
| D2 | D2 | 0.470 | 0.870 |
| E1 | E1 | 3.375 | 3.575 |
| D3 | D3 | 4.824 | 4.976 |
| E2 | E2 | 5.674 | 5.826 |
| k | k | 1.190 | 1.390 |
| b | b | 0.350 | 0.450 |
| e | e | 1.270 TYP. | 0.050 TYP. |
| L | L | 0.559 | 0.711 |
| L1 | L1 | 0.424 | 0.576 |
| H | H | 0.574 | 0.726 |
| 10 | 12 | ||
2505291610_Siliup-SP40N05GDNK_C48888455.pdf
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