Switching MOSFET Siliup SP4N90TG 900V N Channel Device with Low RDS on and Fast Switching Speeds
Key Attributes
Model Number:
SP4N90TG
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
-
Output Capacitance(Coss):
75pF
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
850pF
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP4N90TG
Package:
TO-220F
Product Description
Product Overview
The SP4N90TG is a 900V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high-frequency switching and synchronous rectification, this MOSFET offers fast switching speeds, low gate charge, and a low RDS(on) of 3.6 at 10V. It is ideally suited for DC-DC converter applications. The device comes in a TO-220F package.
Product Attributes
- Brand: Siliup
- Product Code: SP4N90TG
- Technology: Planar MOSFET
- Channel Type: N-Channel
- Package: TO-220F
- Marking: 4N90 (Product code), *: Week code
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 900 | V | |||
| RDS(on)Typ | RDS(on)TYP | @10V | 3.6 | |||
| Continuous Drain Current | ID | 4 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 900 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current (Tc=25) | ID | 4 | A | |||
| Continuous Drain Current (Tc=100) | ID | 2.6 | A | |||
| Pulsed Drain Current | IDM | 16 | A | |||
| Power Dissipation (Tc=25) | PD | 35 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 3.57 | /W | |||
| Storage Temperature Range | TSTG | -55 to 150 | ||||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 900 | V | ||
| Drain Cut-Off Current | IDSS | VDS = 720V, VGS = 0V | - | 25 | A | |
| Gate Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | 0.1 | A | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 3A | - | 3.6 | 4.8 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 850 | pF | |
| Output Capacitance | Coss | - | 75 | pF | ||
| Reverse Transfer Capacitance | Crss | - | 11 | pF | ||
| Total Gate Charge | Qg | VDS=720V , VGS=10V , ID=70A | - | 30 | nC | |
| Gate-Source Charge | Qgs | - | 5 | nC | ||
| Gate-Drain Charge | Qg d | - | 12 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 450V, VDS = 25V, ID = 4A RG = 2.5 | - | 16 | nS | |
| Rise Time | tr | - | 17 | nS | ||
| Turn-Off Delay Time | td(off) | - | 44 | nS | ||
| Fall Time | tf | - | 15 | nS | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | - | 4 | A | ||
| Body Diode Reverse Recovery Time | Trr | IS=4A, di/dt=100A/us, TJ=25 | - | 385 | nS | |
| Body Diode Reverse Recovery Charge | Qrr | - | 1795 | nC | ||
Package Information (TO-220F)
| Symbol | Dimensions (Millimeters) |
|---|---|
| A | 4.300 - 4.700 |
| A1 | 1.300 REF. |
| A2 | 2.800 - 3.200 |
| A3 | 2.500 - 2.900 |
| b | 0.500 - 0.750 |
| b1 | 1.100 - 1.350 |
| b2 | 1.500 - 1.750 |
| c | 0.500 - 0.750 |
| D | 9.960 - 10.360 |
| E | 14.800 - 15.200 |
| e | 2.540 TYP. |
| F | 2.700 REF. |
| 3.500 REF. | |
| h | 0.000 - 0.300 |
| h1 | 0.800 REF. |
| h2 | 0.500 REF. |
| L | 28.000 - 28.400 |
| L1 | 1.700 - 1.900 |
| L2 | 0.900 - 1.100 |
2504101957_Siliup-SP4N90TG_C42372392.pdf
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