Industrial power MOSFET Slkor SL4410 with 20 amp continuous current and 30 volt drain source voltage
Product Overview
The SL4410 is a high-performance N-Channel Enhancement Mode MOSFET designed for power management applications. It offers a 30V/20A rating with low on-resistance (RDS(ON) = 5.9m max. @ VGS=10V, 7.9m max. @ VGS=4.5V). This device is 100% UIS + Rg Tested, ensuring reliability and ruggedness. Available in Lead Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: SLKOR Micro
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| VDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | 30 | - | - | V |
| ID | Continuous Drain Current (VGS=10V) | TA=25C | - | - | 20 | A |
| ID | Continuous Drain Current (VGS=10V) | TA=70C | - | - | 15.8 | A |
| IDM | Pulsed Drain Current (VGS=10V) | 300s | - | - | 80 | A |
| IS | Diode Continuous Forward Current | - | - | - | 5 | A |
| IAS | Avalanche Current (Single Pulse) | - | - | - | 25 | A |
| EAS | Single Pulse Avalanche Energy (L=0.1mH) | - | - | - | 31 | mJ |
| TJ | Maximum Junction Temperature | - | - | - | 150 | C |
| TSTG | Storage Temperature Range | - | -55 | - | 150 | C |
| PD | Maximum Power Dissipation | TA=25C | - | - | 4.2 | W |
| PD | Maximum Power Dissipation | TA=70C | - | - | 2.6 | W |
| RJA | Thermal Resistance-Junction to Ambient | Steady State, t 10s | - | 30 | 65 | C/W |
| RJL | Thermal Resistance-Junction to Lead | Steady State | - | 20 | - | C/W |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=24V, VGS=0V | - | - | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | TJ=85C | - | - | 30 | A |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | 1.3 | 1.8 | 2.5 | V |
| IGSS | Gate Leakage Current | VGS=20V, VDS=0V | - | - | 100 | nA |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=20A | - | 4.5 | 5.9 | m |
| RDS(ON) | Drain-Source On-state Resistance | VGS=4.5V, IDS=14A | - | 6.1 | 7.9 | m |
| VSD | Diode Forward Voltage | ISD=5A, VGS=0V | - | 0.8 | 1.1 | V |
| trr | Reverse Recovery Time | ISD=20A, dlSD/dt=100A/s | - | 10 | - | ns |
| Qrr | Reverse Recovery Charge | - | - | 3 | - | nC |
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 2.4 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS=15V, Frequency=1.0MHz | - | 1700 | - | pF |
| Coss | Output Capacitance | - | - | 265 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 165 | - | pF |
| td(ON) | Turn-on Delay Time | VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 | - | 14 | 26 | ns |
| tr | Turn-on Rise Time | - | - | 10 | 19 | ns |
| td(OFF) | Turn-off Delay Time | - | - | 44 | 80 | ns |
| tf | Turn-off Fall Time | - | - | 12 | 23 | ns |
| Qg | Total Gate Charge | VDS=15V, VGS=10V, IDS=20A | - | 28.3 | 39.6 | nC |
| Qg | Total Gate Charge | VDS=15V, VGS=4.5V, IDS=20A | - | 12.9 | - | nC |
| Qgs | Gate-Source Charge | - | - | 4.22 | - | nC |
| Qgd | Gate-Drain Charge | - | - | 7.3 | - | nC |
2208041800_Slkor-SL4410_C5122566.pdf
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