P Channel Enhancement Mode MOSFET Slkor SL3139KL with Low Threshold Voltage and Fast Switching Speed
Key Attributes
Model Number:
SL3139KL
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
980mA
RDS(on):
370mΩ@4.5V;500mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 P-Channel
Input Capacitance(Ciss):
113pF
Output Capacitance(Coss):
15pF
Pd - Power Dissipation:
710mW
Gate Charge(Qg):
1.24nC@4.5V
Mfr. Part #:
SL3139KL
Package:
DFN1006-3L
Product Description
Product Overview
This P-Channel Enhancement Mode MOSFET features advanced trench process technology, offering a low threshold voltage and fast switching speed. It is halogen-free, lead-free, and ESD protected (HBM 2.5KV). Ideal for load switching in portable devices and as a voltage-controlled small signal switch.
Product Attributes
- Brand: SLKormicro
- Model: SL3139KL
- Certifications: Halogen-Free & Lead-Free
- Package: DFN1006-3L
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID = -250 A | ||
| Drain-Source Leakage Current | IDSS | -1.0 | A | VDS = -20 V | ||
| Gate Leakage Current | IGSS | 10 | A | VGS = 12V | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.35 | -0.7 | -1.1 | V | VDS = VGS, ID = - 250 A |
| Drain-Source On-State Resistance | RDS(on) | 370 | 530 | m | VGS = -4.5 V, ID = -0.5 A | |
| Drain-Source On-State Resistance | RDS(on) | 500 | 775 | m | VGS = -2.5 V, ID = -0.3A | |
| Forward Transconductance | gfs | 1.2 | S | VDS = -10 V, ID = -0.54 A | ||
| Input Capacitance | Ciss | 113 | pF | VGS = 0 V, VDS = -16V, f = 1 MHz | ||
| Output Capacitance | Coss | 15 | pF | VGS = 0 V, VDS = -16 V, f = 1 MHz | ||
| Reverse Transfer Capacitance | Crss | 9 | pF | VGS = 0 V, VDS =- 16V, f = 1 MHz | ||
| Gate charge total | Qg | 1.24 | nC | VDS = - 10 V, ID = - 0.65 A, VGS = - 4.5 V | ||
| Gate to Source Charge | Qgs | 0.37 | nC | VDS = - 10 V, ID = - 0.65 A, VGS = - 4.5 V | ||
| Gate to Drain Charge | Qgd | 0.27 | nC | VDS = - 10 V, ID = - 0.65 A, VGS = - 4.5 V | ||
| Turn-On Delay Time | td(on) | 9 | ns | VGS = -4.5 V, VDS = -10 V, ID = -0.2 A, RGEN= 10 | ||
| Turn-On Rise Time | tr | 32.6 | ns | VGS = -4.5 V, VDS = -10 V, ID = -0.2 A, RGEN= 10 | ||
| Turn-Off Delay Time | td(off) | 5.7 | ns | VGS = -4.5 V, VDS = -10 V, ID = -0.2 A, RGEN= 10 | ||
| Turn-Off Fall Time | tf | 20.3 | ns | VGS = -4.5 V, VDS = -10 V, ID = -0.2 A, RGEN= 10 | ||
| Drain-Source Diode Forward Voltage | VSD | -1.2 | V | IS = -0.5 A, VGS = 0 V | ||
| Body Diode Reverse Recovery Time | trr | 10.2 | ns | IF = -1.25 A, di/dt = 100 A / s | ||
| Body Diode Reverse Recovery Charge | Qrr | 3.5 | nC | IF = -1.25A, di/dt = 100 A / s |
2504211840_Slkor-SL3139KL_C48392752.pdf
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