Low On Resistance 30V N Channel MOSFET Siliup SP30N03BNJ Suitable for Power Management and Conversion

Key Attributes
Model Number: SP30N03BNJ
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@4.5V,15A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
230pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
36W
Input Capacitance(Ciss):
2.01nF@15V
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
SP30N03BNJ
Package:
PDFN3X3-8L
Product Description

Product Overview

The SP30N03BNJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low on-resistance with typical values of 3.5m at 10V and 6m at 4.5V, and is 100% tested for single pulse avalanche energy. This MOSFET is designed for applications such as DC-DC converters and power management.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP30N03BNJ
  • Package: PDFN3X3-8L
  • Technology: N-Channel MOSFET

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 30 V
On-Resistance RDS(on)TYP @10V 3.5 m
On-Resistance RDS(on)TYP @4.5V 6 m
Continuous Drain Current ID 60 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25,unless otherwise noted) 30 V
Gate-Source Voltage VGSS (Ta=25,unless otherwise noted) 20 V
Continuous Drain Current ID (Tc=25C) 60 A
Pulse Drain Current Tested IDM 240 A
Single Pulse Avalanche Energy EAS 225 mJ
Power Dissipation PD (Tc=25C) 40 W
Thermal Resistance Junction-to-Case RJC 3.1 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 33.5 - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=20A - 3.5 4.5 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=15A - 6 8 m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 2010 - pF
Output Capacitance Coss - 250 - pF
Reverse Transfer Capacitance Crss - 230 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=45A - 60 - nC
Gate-Source Charge Qgs - 8.2 -
Gate-Drain Charge Qg - 7.4 -
Turn-On Delay Time Td(on) VDD=15V, VGS=10V , RG=3, ID=20A - 12 - nS
Rise Time Tr - 15 -
Turn-Off Delay Time Td(off) - 40 - nS
Fall Time Tf - 14 -
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Diode Continuous Current IS - - 60 A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 - 47 - nS
Reverse recovery charge Qrr - 45 - nC
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 3.100 0.114 0.122
D1 2.300 2.600 0.091 0.102
E 2.900 3.100 0.114 0.122
E1 3.150 3.450 0.124 0.136
E2 1.535 1.935 0.060 0.076
b 0.200 0.400 0.008 0.016
e 0.550 0.750 0.022 0.030
L 0.300 0.500 0.012 0.020
L1 0.180 0.480 0.007 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 0.515 0.012 0.020
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2504101957_Siliup-SP30N03BNJ_C41354861.pdf

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