Power MOSFET Siliup SP60N06GP8 60V N Channel Fast Switching Device with Split Gate Trench Technology
Key Attributes
Model Number:
SP60N06GP8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V;8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 N-channel
Output Capacitance(Coss):
390pF
Input Capacitance(Ciss):
1.982nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
SP60N06GP8
Package:
SOP-8L
Product Description
Product Overview
The SP60N06GP8 is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features advanced split gate trench technology for fast switching and is designed for power management and switched-mode power supply applications. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 60N06G
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Drain-Source On-state Resistance | RDS(on)TYP | @10V | 6.5 | m | ||
| Drain-Source On-state Resistance | RDS(on)TYP | @4.5V | 8.0 | m | ||
| Continuous Drain Current | ID | 16 | A | |||
| Features | ||||||
| Fast Switching | ||||||
| Advanced Split Gate Trench Technology | ||||||
| 100% Single Pulse avalanche energy Test | ||||||
| Application | ||||||
| Power Management | ||||||
| Switched mode power supply | ||||||
| Package | ||||||
| SOP-8L | ||||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 16 | A | |||
| Continuous Drain Current | ID | (Ta=100C) | 11 | A | ||
| Pulse Drain Current Tested | IDM | 64 | A | |||
| Single Pulse Avalanche Energy | EAS | 156 | mJ | |||
| Power Dissipation | PD | 3 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 41.67 | C/W | |||
| Storage Temperature Range | TJ | -55 | 150 | C | ||
| Operating Junction Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.8 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=6A | - | 6.5 | 8 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=4A | - | 8 | 11 | m |
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - | 1982 | - | pF |
| Output Capacitance | Coss | - | 390 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 13 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=6A | - | 35 | - | nC |
| Gate-Source Charge | Qgs | - | 7.2 | - | ||
| Gate-Drain Charge | Qg d | - | 5 | - | ||
| Turn-On Delay Time | td(on) | VDD=30V, ID=6A, VGS=10V, RG=4.7 | - | 10 | - | nS |
| Rise Time | tr | - | 35 | - | ||
| Turn-Off Delay Time | td(off) | - | 31.8 | - | ||
| Fall Time | tf | - | 56.4 | - | ||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 16 | A | |
| Reverse Recovery Time | Trr | IS=12 A,di/dt=100 A/sTJ=25 | - | 24 | - | nS |
| Reverse Recovery Charge | Qrr | - | 36 | - | nC | |
| Package Information | ||||||
| Package Type | SOP-8L | |||||
| Dimensions (mm) | Min | Max | ||||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP60N06GP8_C22466772.pdf
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