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quality 30V N Channel MOSFET Siliup SP30N06GNK with Fast Switching and Tested Single Pulse Avalanche Energy factory
quality 30V N Channel MOSFET Siliup SP30N06GNK with Fast Switching and Tested Single Pulse Avalanche Energy factory

30V N Channel MOSFET Siliup SP30N06GNK with Fast Switching and Tested Single Pulse Avalanche Energy

Key Attributes
Model Number: SP30N06GNK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
35A
RDS(on):
6mΩ@10V;9.4mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
240pF
Pd - Power Dissipation:
28W
Input Capacitance(Ciss):
625pF
Gate Charge(Qg):
7.1nC@10V
Mfr. Part #:
SP30N06GNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP30N06GNK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications and DC-DC converters. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy, ensuring reliability. It is available in a PDFN5X6-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: SP30N06GNK
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Units
Product Summary
V(BR)DSS 30 V
RDS(on)TYP @10V 6 m
ID 35 A
RDS(on)TYP @4.5V 9.4 m
Absolute Maximum Ratings
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 35 A
Continuous Drain Current (Tc=100) ID 23 A
Pulsed Drain Current IDM 140 A
Single Pulse Avalanche Energy EAS 39.2 mJ
Power Dissipation (Tc=25) PD 28 W
Thermal Resistance Junction-to-Case RJC 4.5 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain Cut-Off Current IDSS VDS=30V , VGS=0V - - 1 uA
Gate Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.2 1.7 2.2 V
Drain-Source ON Resistance RDS(ON) VGS=10V , ID=12A - 6 8 m
Drain-Source ON Resistance RDS(ON) VGS=4.5V , ID=12A - 9.4 11 m
Dynamic Characteristics
Input Capacitance Ciss VDS=15V,VGS=0V,f=1MHZ - 625 - pF
Output Capacitance Coss - 240 - pF
Reverse Transfer Capacitance Crss - 25 - pF
Total Gate Charge Qg VGS=10V,VDS=15V,ID=12A - 7.1 - nC
Gate-Source Charge Qgs - 2.2 -
Gate-Drain Charge Qg - 3.1 -
Switching Characteristics
Turn-On Delay Time td(on) VGS=10V,VDD=15V, ID=12A, RGEN=2 - 7 - nS
Rise Time tr - 18.8 -
Turn-Off Delay Time td(off) - 19.5 -
Fall Time tf - 3.4 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 35 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 11 - nS
Reverse Recovery Charge Qrr - 18 - nC
Package Information
Package Type PDFN5X6-8L
Device Code 30N06G
Order Information SP30N06GNK
Unit/Tape 5000

2504101957_Siliup-SP30N06GNK_C22466704.pdf

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