High Current P Channel MOSFET Slkor SL0D90AP with 30V Drain Source Voltage and Low Gate Threshold Voltage
Key Attributes
Model Number:
SL0D90AP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
520pF
Input Capacitance(Ciss):
4.45nF
Output Capacitance(Coss):
800pF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
38nC@4.5V
Mfr. Part #:
SL0D90AP
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SL0D90AP is a high-performance P-Channel MOSFET designed for battery and loading switching applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent package for good heat dissipation. This MOSFET offers a -30V drain-source voltage and a continuous drain current of -90A.
Product Attributes
- Brand: SLKORMicro
- Model: SL0D90AP
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Electrical Characteristics @ TJ = 25C (unless otherwise stated) | Drain-Source Breakdown Voltage | VGS=0VID=-250A | -30 | -- | -- | V |
| Zero Gate Voltage Drain Current | VDS=-30VVGS=0V | -- | -- | -1 | A | |
| Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA | |
| Gate Threshold Voltage | VDS=VGSID=-250A | -1.0 | -1.5 | -2.2 | V | |
| Drain-Source On-State Resistance | VGS=-10V ID=-45A | -- | 4.5 | 6 | m | |
| Drain-Source On-State Resistance | VGS=-4.5VID=-45A | -- | 6.3 | 8 | m | |
| Source- Drain Diode Forward on voltage | Tj=25Is=-15A | -- | -- | -1.2 | V | |
| Switching Characteristics @ TJ = 25C (unless otherwise stated) | Turn-on Delay Time | VDD=-15VID=-15A VGS=-10VRG=3 | -- | 15 | -- | nS |
| Turn-on Rise Time | -- | -- | 22 | -- | nS | |
| Turn-Off Delay Time | -- | -- | 85 | -- | nS | |
| Turn-Off Fall Time | -- | -- | 45 | -- | nS | |
| Total Gate Charge | VDS=-15VID=-15A VGS=-10V | -- | 38 | -- | nC | |
| Capacitance @ TJ = 25C (unless otherwise stated) | Input Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 4450 | -- | pF |
| Output Capacitance | -- | -- | 800 | -- | pF | |
| Reverse Transfer Capacitance | -- | -- | 520 | -- | pF | |
| Absolute Maximum Ratings | Drain-Source Voltage | VDS | -- | -30 | -- | V |
| Gate-Source Voltage | VGS | -- | 20 | -- | V | |
| Continuous Drain Current | ID Tc=25C | -- | -90 | -- | A | |
| Pulse Drain Current | IDM Tc=25C | -- | -360 | -- | A | |
| Thermal Resistance | Junction-Ambient | RJA | -- | 62.5 | -- | C/W |
2412171034_Slkor-SL0D90AP_C42415156.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
