High Voltage N Channel Planar MOSFET Siliup SP1N30T1 with Fast Switching and Low Gate Charge Features
Key Attributes
Model Number:
SP1N30T1
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
3pF
Number:
1 N-channel
Output Capacitance(Coss):
7.5pF
Pd - Power Dissipation:
360mW
Input Capacitance(Ciss):
59pF
Gate Charge(Qg):
2nC@10V
Mfr. Part #:
SP1N30T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP1N30T1 is a 300V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low Rdson, making it ideal for DC-DC converters and high-frequency switching applications, including synchronous rectification. This device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Technology: Planar MOSFET
- Channel Type: N-Channel
- Package: SOT-23-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 300 | V | ||||
| RDS(on)TYP | @10V | 5 | ||||
| ID | 1 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 300 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | 1 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | 4 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25) | 8 | mJ | ||
| Power Dissipation | PD | (TC=25) | 0.36 | W | ||
| Thermal Resistance Junction-Ambient | RJA | 347 | /W | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 300 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=240V , VGS=0V , TJ=25 | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.1 | 1.6 | 2.1 | V |
| Static Drain-Source on-Resistance | RDS(ON) | VGS=10V , ID=0.5A | 5 | 6.3 | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | 59 | pF | ||
| Output Capacitance | Coss | VDS=25V , VGS=0V , f=1MHz | 7.5 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V , VGS=0V , f=1MHz | 3 | pF | ||
| Total Gate Charge | Qg | VDS=192V , VGS=10V , ID=1A | 2 | nC | ||
| Gate-Source Charge | Qgs | VDS=192V , VGS=10V , ID=1A | 0.15 | nC | ||
| Gate-Drain Charge | Qg | VDS=192V , VGS=10V , ID=1A | 0.9 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=120V , VGS=10V , RG=6, ID=1A | 3.4 | nS | ||
| Rise Time | Tr | VDD=120V , VGS=10V , RG=6, ID=1A | 3 | nS | ||
| Turn-Off Delay Time | Td(off) | VDD=120V , VGS=10V , RG=6, ID=1A | 14 | nS | ||
| Fall Time | Tf | VDD=120V , VGS=10V , RG=6, ID=1A | 64 | nS | ||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 0.1A, VGS = 0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 0.1 | A | |||
| Reverse Recovery Time | Trr | IS=0.1A, di/dt=100A/us, TJ=25 | 43 | nS | ||
| Reverse Recovery Charge | Qrr | IS=0.1A, di/dt=100A/us, TJ=25 | 23 | nC | ||
| Package Information (SOT-23-3L) | ||||||
| Symbol | Dimensions in millimeters | Min. | Max. | |||
| A | 1.050 | 1.250 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 1.050 | 1.150 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.100 | 0.200 | ||||
| D | 2.820 | 3.020 | ||||
| E | 1.500 | 1.700 | ||||
| E1 | 2.650 | 2.950 | ||||
| e | 0.950 | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.300 | 0.600 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP1N30T1_C42372380.pdf
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