High reliability p channel mosfet Siliup SP60P25TQ with low gate charge and 60v drain source voltage
Key Attributes
Model Number:
SP60P25TQ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
45A
RDS(on):
25mΩ@10V;30mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
-
Output Capacitance(Coss):
179pF
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
2.417nF
Gate Charge(Qg):
46.5nC@10V
Mfr. Part #:
SP60P25TQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP60P25TQ is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on). The device is 100% tested for single pulse avalanche energy and is available in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60P25TQ
- Package: TO-220-3L (1:G 2:D 3:S)
- Marking: 60P25
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | -60 | V | ||||
| RDS(on)TYP | @10V | 25 | m | |||
| RDS(on)TYP | @4.5V | 30 | m | |||
| ID | -45 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | -45 | A | |||
| Continuous Drain Current (Tc=100) | ID | -30 | A | |||
| Pulsed Drain Current | IDM | -180 | A | |||
| Single Pulse Avalanche Energy | EAS | 225 | mJ | |||
| Power Dissipation (Tc=25) | PD | 70 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.78 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain Cut-Off Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | -1 | A | ||
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | 25 | 35 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-4A | 30 | 42 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-30V,VGS=0V,f=1MHz | 2417 | pF | ||
| Output Capacitance | Coss | 179 | pF | |||
| Reverse Transfer Capacitance | Crss | 120 | pF | |||
| Total Gate Charge | Qg | VDS=-30V,VGS=-10V,ID=-6A | 46.5 | nC | ||
| Gate-Source Charge | Qgs | 9.1 | ||||
| Gate-Drain Charge | Qg d | 9.2 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-30V,VGS=-10V,ID=-20A,RG=3 | 9.8 | nS | ||
| Rise Time | tr | 6.1 | ||||
| Turn-Off Delay Time | td(off) | 44 | ||||
| Fall Time | tf | 12.7 | ||||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -45 | A | |||
| Reverse Recovery Time | Trr | IS=-20A, di/dt=-100A/us, Tj=25 | 25 | nS | ||
| Reverse Recovery Charge | Qrr | 55 | nC | |||
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 | |
2504101957_Siliup-SP60P25TQ_C41355213.pdf
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