power management solution featuring Siliup SP30P25NJ 30V P Channel MOSFET with fast switching speeds

Key Attributes
Model Number: SP30P25NJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
RDS(on):
25mΩ@10V;36mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
112pF
Number:
1 P-Channel
Output Capacitance(Coss):
116pF
Input Capacitance(Ciss):
850pF
Pd - Power Dissipation:
18W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
SP30P25NJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP30P25NJ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching speeds, low on-resistance, and 100% single pulse avalanche energy testing. This MOSFET is ideal for applications such as DC-DC converters and power management systems.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP30P25NJ
  • Device Code: 30P25
  • Package: PDFN3X3-8L
  • Technology: P-Channel MOSFET

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -30 V
RDS(on) RDS(on)TYP -10V 25 m
RDS(on) RDS(on)TYP -4.5V 36 m
Continuous Drain Current ID -10 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25) -30 V
Gate-Source Voltage VGSS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25C) -10 A
Continuous Drain Current ID (Tc=100C) -7 A
Pulse Drain Current IDM Tested -40 A
Single Pulse Avalanche Energy EAS 36 mJ
Power Dissipation PD (Tc=25C) 18 W
Thermal Resistance Junction-to-Case RJC 6.9 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-4A 25 32 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-2A 36 45 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz 850 pF
Output Capacitance Coss 116 pF
Reverse Transfer Capacitance Crss 112 pF
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-6.5A 13 nC
Gate-Source Charge Qgs 2.6 nC
Gate-Drain Charge Qg 2.2 nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-15V VGS=-10V , RG=3, ID=-4A 7.5 nS
Rise Time Tr 5.5 nS
Turn-Off Delay Time Td(off) 19 nS
Fall Time Tf 7 nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Maximum Body-Diode Continuous Current IS -16 A
Reverse recover time Trr IS=-5A, di/dt=-100A/us, Tj=25 0.9 nS
Reverse recovery charge Qrr 7 nC
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 3.100 0.114 0.122
D1 2.300 2.600 0.091 0.102
E 2.900 3.100 0.114 0.122
E1 3.150 3.450 0.124 0.136
E2 1.535 1.935 0.060 0.076
b 0.200 0.400 0.008 0.016
e 0.550 0.750 0.022 0.030
L 0.300 0.500 0.012 0.020
L1 0.180 0.480 0.007 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 0.515 0.012 0.020
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2504101957_Siliup-SP30P25NJ_C41355030.pdf

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