power management solution featuring Siliup SP30P25NJ 30V P Channel MOSFET with fast switching speeds
Product Overview
The SP30P25NJ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching speeds, low on-resistance, and 100% single pulse avalanche energy testing. This MOSFET is ideal for applications such as DC-DC converters and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30P25NJ
- Device Code: 30P25
- Package: PDFN3X3-8L
- Technology: P-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) | RDS(on)TYP | -10V | 25 | m | ||
| RDS(on) | RDS(on)TYP | -4.5V | 36 | m | ||
| Continuous Drain Current | ID | -10 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | -30 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | -10 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | -7 | A | ||
| Pulse Drain Current | IDM | Tested | -40 | A | ||
| Single Pulse Avalanche Energy | EAS | 36 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 18 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 6.9 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-4A | 25 | 32 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-2A | 36 | 45 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 850 | pF | ||
| Output Capacitance | Coss | 116 | pF | |||
| Reverse Transfer Capacitance | Crss | 112 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-6.5A | 13 | nC | ||
| Gate-Source Charge | Qgs | 2.6 | nC | |||
| Gate-Drain Charge | Qg | 2.2 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=3, ID=-4A | 7.5 | nS | ||
| Rise Time | Tr | 5.5 | nS | |||
| Turn-Off Delay Time | Td(off) | 19 | nS | |||
| Fall Time | Tf | 7 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -16 | A | |||
| Reverse recover time | Trr | IS=-5A, di/dt=-100A/us, Tj=25 | 0.9 | nS | ||
| Reverse recovery charge | Qrr | 7 | nC | |||
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 | 0.850 | 0.026 | 0.033 | ||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 | 3.100 | 0.114 | 0.122 | ||
| D1 | 2.300 | 2.600 | 0.091 | 0.102 | ||
| E | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E1 | 3.150 | 3.450 | 0.124 | 0.136 | ||
| E2 | 1.535 | 1.935 | 0.060 | 0.076 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| e | 0.550 | 0.750 | 0.022 | 0.030 | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 | ||
| L1 | 0.180 | 0.480 | 0.007 | 0.019 | ||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 | 0.515 | 0.012 | 0.020 | ||
| 9 | 13 | 9 | 13 | |||
2504101957_Siliup-SP30P25NJ_C41355030.pdf
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