Trench Power MV MOSFET SLkor SL05N06A N Channel Enhancement Mode Device with High Density Cell Design
Key Attributes
Model Number:
SL05N06A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Input Capacitance(Ciss):
330pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
5.1nC
Mfr. Part #:
SL05N06A
Package:
SOT-223-3
Product Description
Product Overview
The SL05N06A is a Trench Power MV MOSFET featuring an N-Channel Enhancement Mode Field Effect Transistor design. It offers excellent heat dissipation due to its package and a high-density cell design for low RDS(ON). This MOSFET is suitable for DC-DC converters and power management functions.
Product Attributes
- Brand: SLKOR
- Model: SL05N06A
- Technology: Trench Power MV MOSFET
- Channel Type: N-Channel Enhancement Mode
- Package: SOT-223
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS1 | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate-Body Leakage Current | IGSS2 | VGS= 10V, VDS=0V | 50 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.0 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=3A | 65 | 100 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=1.5A | 78 | 120 | m | |
| Diode Forward Voltage | VSD | IS=3.0A,VGS=0V | 0.8 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 3.0 | A | |||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHZ | 330 | pF | ||
| Output Capacitance | Coss | VDS=30V,VGS=0V,f=1MHZ | 90 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f=1MHZ | 17 | pF | ||
| Total Gate Charge | Qg | VGS=10V,VDS=30V,ID=3.0A | 5.1 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V,VDS=30V,ID=3.0A | 1.3 | nC | ||
| Gate-Drain Charge | Qg | VGS=10V,VDS=30V,ID=3.0A | 1.7 | nC | ||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=30V, ID=1.5A,RL=1 RGEN=3 | 13 | ns | ||
| Turn-on Rise Time | tr | VGS=10V,VDD=30V, ID=1.5A,RL=1 RGEN=3 | 51 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=30V, ID=1.5A,RL=1 RGEN=3 | 19 | ns | ||
| Turn-off fall Time | tf | VGS=10V,VDD=30V, ID=1.5A,RL=1 RGEN=3 | 12 | ns | ||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | 5.0 | A | |||
| Pulsed Drain Current | IDM | 12 | A | |||
| Total Power Dissipation | PD | @ TC=25 | 1.2 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | 105 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 |
2201210930_Slkor-SL05N06A_C2965542.pdf
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