Low RDSon and Fast Switching 60V N Channel MOSFET Siliup SP60N13TQ for Power Management Applications
Key Attributes
Model Number:
SP60N13TQ
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
116pF
Number:
1 N-channel
Output Capacitance(Coss):
130pF
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
2.403nF
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
SP60N13TQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP60N13TQ is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET features fast switching, low gate charge, and low RDS(on). It is tested for 100% single pulse avalanche energy and is available in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N13TQ
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Units | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | 60 | V | ||
| RDS(on) TYP | - | @10V | 13 | m | ||
| RDS(on) TYP | - | @4.5V | 17 | m | ||
| ID | - | - | 55 | A | ||
| Features | ||||||
| - | - | - | Fast Switching | - | ||
| - | - | - | Low Gate Charge and RDSon | - | ||
| - | - | - | 100% Single Pulse avalanche energy Test | - | ||
| Applications | ||||||
| - | - | - | Power switching application | - | ||
| - | - | - | DC-DC Converter | - | ||
| - | - | - | Power Management | - | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 55 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 37 | A | ||
| Pulsed Drain Current | IDM | - | 220 | A | ||
| Single Pulse Avalanche Energy | EAS | - | 156 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 70 | W | ||
| Thermal Resistance Junction-to-Case | RJC | - | 1.79 | /W | ||
| Storage Temperature Range | TSTG | - | -55 to 150 | |||
| Operating Junction Temperature Range | TJ | - | -55 to 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | V | ||
| Drain Cut-Off Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | 1 | A | |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.2 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 13 | 17 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 17 | 23 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 2403 | - | pF |
| Output Capacitance | Coss | - | - | 130 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 116 | - | pF |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=10A | - | 39 | - | nC |
| Gate-Source Charge | Qgs | - | - | 5.6 | - | - |
| Gate-Drain Charge | Qgd | - | - | 9.5 | - | - |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V,VGS=10V ,RG=3,ID=10A | - | 7.8 | - | nS |
| Rise Time | tr | - | - | 48 | - | - |
| Turn-Off Delay Time | td(off) | - | - | 28 | - | - |
| Fall Time | tf | - | - | 30 | - | - |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 55 | A |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 19 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 84 | - | nC |
| Package Information (TO-220-3L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | ||
| A | 4.400 - 4.600 | 0.173 - 0.181 | - | - | ||
| A1 | 2.250 - 2.550 | 0.089 - 0.100 | - | - | ||
| b | 0.710 - 0.910 | 0.028 - 0.036 | - | - | ||
| b1 | 1.170 - 1.370 | 0.046 - 0.054 | - | - | ||
| c | 0.330 - 0.650 | 0.013 - 0.026 | - | - | ||
| c1 | 1.200 - 1.400 | 0.047 - 0.055 | - | - | ||
| D | 9.910 - 10.250 | 0.390 - 0.404 | - | - | ||
| E | 8.950 - 9.750 | 0.352 - 0.384 | - | - | ||
| E1 | 12.650 - 13.050 | 0.498 - 0.514 | - | - | ||
| e | 2.540 TYP. | 0.100 TYP. | - | - | ||
| e1 | 4.980 - 5.180 | 0.196 - 0.204 | - | - | ||
| F | 2.650 - 2.950 | 0.104 - 0.116 | - | - | ||
| H | 7.900 - 8.100 | 0.311 - 0.319 | - | - | ||
| h | 0.000 - 0.300 | 0.000 - 0.012 | - | - | ||
| L | 12.900 - 13.400 | 0.508 - 0.528 | - | - | ||
| L1 | 2.850 - 3.250 | 0.112 - 0.128 | - | - | ||
| V | 6.900 REF. | 0.276 REF. | - | - | ||
| 3.400 - 3.800 | 0.134 - 0.150 | - | - | |||
2504101957_Siliup-SP60N13TQ_C41354977.pdf
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