Low On Resistance N Channel MOSFET Siliup SP30N10NQ 30V in PDFN2X2 6L Package for Power Management
Key Attributes
Model Number:
SP30N10NQ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
RDS(on):
9.5mΩ@10V;14mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
109pF
Number:
1 N-channel
Output Capacitance(Coss):
131pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
940pF
Gate Charge(Qg):
9.6nC@4.5V
Mfr. Part #:
SP30N10NQ
Package:
DFN-6L(2x2)
Product Description
Product Overview
The SP30N10NQ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power management functions and DC-DC converters, this MOSFET features low on-resistance and low input capacitance. It is available in a PDFN2X2-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP30N10NQ
- Channel Type: N-Channel
- Voltage Rating: 30V
- Package: PDFN2X2-6L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| On-Resistance | RDS(on) | @10V | 9.5 | m | ||
| On-Resistance | RDS(on) | @4.5V | 14 | m | ||
| Continuous Drain Current | ID | 12 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 12 | A | |||
| Pulsed Drain Current | IDM | 48 | A | |||
| Power Dissipation | PD | 2.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 50 | /W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =8A | - | 9.5 | 14 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =4A | - | 14 | 20 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 940 | - | pF |
| Output Capacitance | Coss | - | 131 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 109 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | - | 9.6 | - | nC |
| Gate-Source Charge | Qgs | - | 3.9 | - | nC | |
| Gate-Drain Charge | Qgd | - | 3.4 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 4.2 | - | nS |
| Rise Time | Tr | - | 8.2 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 31 | - | nS | |
| Fall Time | Tf | - | 4 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (PDFN2X2-6L) | ||||||
| Symbol | Dimensions (mm) | Min. | Typ. | Max. | Unit | |
| A | 0.70 | 0.75 | 0.80 | |||
| A1 | 0.02 | 0.05 | ||||
| b | 0.25 | 0.30 | 0.35 | |||
| b1 | 0.20REF | |||||
| c | 0.203REF | |||||
| D | 1.90 | 2.00 | 2.10 | |||
| D1 | 0.08 | 0.125 | 0.18 | |||
| D2 | 0.85 | 0.90 | 0.95 | |||
| D3 | 0.25 | 0.30 | 0.35 | |||
| D4 | 0.33 | 0.375 | 0.43 | |||
| e | 0.65BSC | |||||
| Nd | 1.30BSC | |||||
| E | 1.90 | 2.00 | 2.10 | |||
| E2 | 0.95 | 1.00 | 1.05 | |||
| E3 | 0.55 | 0.60 | 0.65 | |||
| L | 0.20 | 0.25 | 0.30 | |||
| h | 0.25REF | |||||
2504101957_Siliup-SP30N10NQ_C41354873.pdf
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