Dual P Channel MOSFET Siliup BSS84DW 60V 130mA Surface Mount SOT363 Package for Battery Applications
Key Attributes
Model Number:
BSS84DW
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.2Ω@10V;4.5Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
2 P-Channel
Output Capacitance(Coss):
10pF
Pd - Power Dissipation:
320mW
Input Capacitance(Ciss):
30pF
Gate Charge(Qg):
1.8nC@10V
Mfr. Part #:
BSS84DW
Package:
SOT-363
Product Description
Product Overview
The BSS84DW is a 60V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-363 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Name: BSS84DW
- Product Type: Dual P-Channel MOSFET
- Package: SOT-363
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | -60 | V | |||
| On-Resistance (Typ.) | RDS(on) | @-10V | 4.2 | |||
| On-Resistance (Typ.) | RDS(on) | @-4.5V | 4.5 | |||
| Continuous Drain Current | ID | -130 | mA | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -130 | mA | |||
| Pulse Drain Current | IDM | Tested | -520 | mA | ||
| Power Dissipation | PD | 320 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 390 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.8 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-150mA | 4.2 | 6 | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-150mA | 4.5 | 7 | ||
| Input Capacitance | Ciss | VDS=-5V , VGS=0V , f=1MHz | 30 | pF | ||
| Output Capacitance | Coss | 10 | pF | |||
| Reverse Transfer Capacitance | Crss | 5 | pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-0.15A | 1.8 | nC | ||
| Gate-Source Charge | Qgs | 0.5 | nC | |||
| Gate-Drain Charge | Qg | 0.18 | nC | |||
| Turn-On Delay Time | td(on) | VDD=-15V VGS=-10V , RG=50, ID=-0.15A | 8.6 | nS | ||
| Turn-On Rise Time | tr | 20 | nS | |||
| Turn-Off Delay Time | td(off) | 14 | nS | |||
| Turn-Off Fall Time | tf | 77 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-363) | ||||||
| Dimension | Symbol | Min. | Max. | Millimeters | ||
| A | 0.90 | 1.00 | ||||
| A1 | 0.00 | 0.10 | ||||
| B | 0.10 | 0.30 | ||||
| b1 | 1.30 | |||||
| D | 1.80 | 2.20 | ||||
| E | 2.00 | 2.20 | ||||
| E1 | 1.15 | 1.35 | ||||
| e | 0.65 | TYP. | ||||
| L | 0.10 | 0.25 | ||||
| L1 | 0.15 | 0.4 | ||||
2504101957_Siliup-BSS84DW_C41354831.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
