High current P Channel MOSFET SLkor SL0D30AP with fully characterized avalanche voltage and current
Product Overview
The SL0D3AP is a high-density P-Channel MOSFET designed for ultra-low RDS(ON). It features fully characterized avalanche voltage and current, offering good stability and uniformity with high EAS. This MOSFET is ideal for battery and loading switching applications and comes in an excellent package for good heat dissipation.
Product Attributes
- Brand: SLKORMicro
- Model: SL0D3AP
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | -30 | V | |||
| VGS | ±20 | V | ||||
| EAS | Single pulse avalanche energy | 77 | mJ | |||
| TJ,TSTG | Storage Temperature Range | -55 | 175 | C | ||
| ID | Diode Continuous Forward Current (Tc=25C, Mounted on Large Heat Sink) | -30 | A | |||
| Common Ratings | IDM | Pulse Drain Current (Tc=25C) | -150 | A | ||
| ID | Tested Continuous Drain Current (Tc=25C) | -30 | A | |||
| PD | Maximum Power Dissipation (TA=25) | 2 | W | |||
| Electrical Characteristics | BV(BR)DSS | Drain-Source Breakdown Voltage (VGS=0V, ID=-250A) | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VDS=-30V, VGS=0V) | -1 | A | |||
| IGSS | Gate-Body Leakage Current (VGS=±20V, VDS=0V) | ±100 | nA | |||
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=-250A) | -1 | -1.5 | -2.2 | V | |
| RDS(on) | Drain-Source On-State Resistance (VGS=-10V, ID=-10A) | 15 | 22 | m | ||
| (VGS=-4.5V, ID=-8A) | 21 | 30 | m | |||
| CISS | Input Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 1500 | pF | |||
| Coss | Output Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 327 | pF | |||
| Crss | Reverse Transfer Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 276 | pF | |||
| Qg | Total Gate Charge (VDS=-15V, ID=-9.1A, VGS=-10V) | 30 | nC | |||
| Qgs | Gate Source Charge (VDS=-15V, ID=-9.1A, VGS=-10V) | 5.3 | nC | |||
| Qgd | Gate Drain Charge (VDS=-15V, ID=-9.1A, VGS=-10V) | 7.6 | nC | |||
| Switching Characteristics | td(on) | Turn-on Delay Time | 14 | nS | ||
| tr | Turn-on Rise Time | 20 | nS | |||
| td(off) | Turn-Off Delay Time | 95 | nS | |||
| tf | Turn-Off Fall Time | 65 | nS | |||
| Source-Drain Diode Characteristics | VSD | Forward On Voltage (Tj=25, Is=-15A) | -1.2 | V |
2412171034_Slkor-SL0D30AP_C42415161.pdf
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