High commutation ruggedness 900V super junction mosfet Siliup SP05H90TC optimized for pc power and inverter circuits
Product Overview
The SP05H90TC is a 900V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance, fast switching speed, and an ultra-fast body diode, leading to extremely low losses due to a very low FOM (Rdson*Qg and Eoss). This MOSFET offers very high commutation ruggedness and is suitable for applications such as DC-AC inverters, PC power, telecom/server, and solar inverters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP05H90TC
- Technology: Super-Junction MOSFET
- Package: SOT-223
- Marking: 05H90
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 900 | V | |||
| Drain-Source On-Resistance | RDS(on) | @10V | 1.7 | |||
| Continuous Drain Current | ID | 0.5 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 900 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current | ID | 0.5 | A | |||
| Pulsed Drain Current | IDM | 2 | A | |||
| Single Pulse Avalanche Energy | EAS | 7.2 | mJ | |||
| Power Dissipation | PD | 4.2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJa | 29.8 | /W | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 900 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS =900V,VGS = 0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS =30V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 2.5 | 3.5 | 4.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS =10V, ID =0.2A | - | 1.7 | 2.1 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | - | 382 | - | pF |
| Output Capacitance | Coss | - | 18 | - | ||
| Reverse Transfer Capacitance | Crss | - | 2.5 | - | ||
| Total Gate Charge | Qg | VDS =15V,VGS =10V,ID =5.6A | - | 15 | - | nC |
| Gate-Source Charge | Qgs | - | 1.4 | - | ||
| Gate-Drain Charge | Qg d | - | 13 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS=10V,VDD=15V,ID=1.5A RL=2.6,RGEN=3 | - | 78 | - | nS |
| Turn-On Rise Time | tr | - | 19 | - | ||
| Turn-Off Delay Time | td(off) | - | 28 | - | ||
| Turn-Off Fall Time | tf | - | 31 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Body Diode Voltage | VSD | IS=1A,VGS=0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 0.5 | A | |
| Reverse recover time | Trr | IS=0.3A, di/dt=100A/us, Tj=25 | - | 185 | - | nS |
| Reverse recovery charge | Qrr | - | 0.85 | - | uC | |
| Package Information (SOT-223) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min | Max | Min | Max |
| A | 1.520 | 1.800 | 0.060 | 0.071 | ||
| A1 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| A2 | 1.500 | 1.700 | 0.059 | 0.067 | ||
| b | 0.660 | 0.820 | 0.026 | 0.032 | ||
| c | 0.250 | 0.350 | 0.010 | 0.014 | ||
| D | 6.200 | 6.400 | 0.244 | 0.252 | ||
| D1 | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E | 3.300 | 3.700 | 0.130 | 0.146 | ||
| E1 | 6.830 | 7.070 | 0.269 | 0.278 | ||
| e | 2.300(BSC) | 0.091(BSC) | ||||
| e1 | 4.500 | 4.700 | 0.177 | 0.185 | ||
| L | 0.900 | 1.150 | 0.035 | 0.045 | ||
| 0 | 10 | 0 | 10 | |||
2504101957_Siliup-SP05H90TC_C22466841.pdf
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