High commutation ruggedness 900V super junction mosfet Siliup SP05H90TC optimized for pc power and inverter circuits

Key Attributes
Model Number: SP05H90TC
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
500mA
RDS(on):
1.7Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
18pF
Input Capacitance(Ciss):
382pF
Pd - Power Dissipation:
4.2W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
SP05H90TC
Package:
SOT-223
Product Description

Product Overview

The SP05H90TC is a 900V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance, fast switching speed, and an ultra-fast body diode, leading to extremely low losses due to a very low FOM (Rdson*Qg and Eoss). This MOSFET offers very high commutation ruggedness and is suitable for applications such as DC-AC inverters, PC power, telecom/server, and solar inverters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP05H90TC
  • Technology: Super-Junction MOSFET
  • Package: SOT-223
  • Marking: 05H90

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Product Summary
Drain-Source Breakdown Voltage V(BR)DSS 900 V
Drain-Source On-Resistance RDS(on) @10V 1.7
Continuous Drain Current ID 0.5 A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS 900 V
Gate-Source Voltage VGS 30 V
Continuous Drain Current ID 0.5 A
Pulsed Drain Current IDM 2 A
Single Pulse Avalanche Energy EAS 7.2 mJ
Power Dissipation PD 4.2 W
Thermal Resistance Junction-to-Ambient RJa 29.8 /W
Storage Temperature Range TSTG -55 +150
Operating Junction Temperature Range TJ -55 +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250A 900 - - V
Zero Gate Voltage Drain Current IDSS VDS =900V,VGS = 0V - - 1 A
Gate-Body Leakage Current IGSS VGS =30V, VDS = 0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS =VGS, ID =250A 2.5 3.5 4.5 V
Drain-Source On-Resistance RDS(on) VGS =10V, ID =0.2A - 1.7 2.1
Dynamic Characteristics
Input Capacitance Ciss VDS =15V,VGS =0V,f =1MHz - 382 - pF
Output Capacitance Coss - 18 -
Reverse Transfer Capacitance Crss - 2.5 -
Total Gate Charge Qg VDS =15V,VGS =10V,ID =5.6A - 15 - nC
Gate-Source Charge Qgs - 1.4 -
Gate-Drain Charge Qg d - 13 -
Switching Characteristics
Turn-On Delay Time td(on) VGS=10V,VDD=15V,ID=1.5A RL=2.6,RGEN=3 - 78 - nS
Turn-On Rise Time tr - 19 -
Turn-Off Delay Time td(off) - 28 -
Turn-Off Fall Time tf - 31 -
Source-Drain Diode Characteristics
Body Diode Voltage VSD IS=1A,VGS=0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 0.5 A
Reverse recover time Trr IS=0.3A, di/dt=100A/us, Tj=25 - 185 - nS
Reverse recovery charge Qrr - 0.85 - uC
Package Information (SOT-223)
Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max
A 1.520 1.800 0.060 0.071
A1 0.000 0.100 0.000 0.004
A2 1.500 1.700 0.059 0.067
b 0.660 0.820 0.026 0.032
c 0.250 0.350 0.010 0.014
D 6.200 6.400 0.244 0.252
D1 2.900 3.100 0.114 0.122
E 3.300 3.700 0.130 0.146
E1 6.830 7.070 0.269 0.278
e 2.300(BSC) 0.091(BSC)
e1 4.500 4.700 0.177 0.185
L 0.900 1.150 0.035 0.045
0 10 0 10

2504101957_Siliup-SP05H90TC_C22466841.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.