Complementary MOSFET 40V Device Siliup SP4013CNK Suitable for High Density Cell and Power Management

Key Attributes
Model Number: SP4013CNK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.061nF
Output Capacitance(Coss):
110pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
SP4013CNK
Package:
PDFNWB-8L(5x6)
Product Description

Product Overview

The SP4013CNK is a 40V Complementary MOSFET designed for high-density cell applications, offering ultra-low RDS(on). This device is fully characterized for avalanche voltage and current, and features fast switching speeds. It is suitable for load switching, inverters, and power management applications.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP4013CNK
  • Package: PDFNWB5X6-8L

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Value P-Channel Conditions P-Channel Value Unit
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage: VGS 20 20 V
Continuous Drain Current (TC=25) ID VGS=10V 25 VGS=-10V -18 A
VGS=4.5V - VGS=-4.5V - A
Pulsed Drain Current IDM 100 -72 A
Maximum Power Dissipation (TC=25) PD 30 W
Thermal Resistance Junction to Case RJC 4.16 /W
Operating & Storage Temperature Range TJ, TSTG -55 To 150
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 VGS=0V , ID=-250uA -40 V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 1 VDS=-32V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 to 2.5 VGS=VDS , ID =-250uA -1 to -2.5 V
Drain-source on-resistance RDS(ON) VGS=10V , ID=10A 15 to 19 VGS=-10V , ID=-5A 32 to 45 m
VGS=4.5V , ID=8A 18 to 25 VGS=-4.5V , ID=-3A 45 to 60 m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz 1061 VDS=-15V , VGS=0V , f=1MHz 964 pF
Output Capacitance Coss VDS=15V , VGS=0V , f=1MHz 110 pF
Reverse Transfer Capacitance Crss VDS=15V , VGS=0V , f=1MHz 95 (N-Ch) / 80 (P-Ch) pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=10A 23 VDS=-15V , VGS=-10V , ID=-10A 21 nC
Gate-Source Charge Qgs 23 (N-Ch) / 21 (P-Ch) nC
Gate-Drain Charge Qgd 3.3 (N-Ch) / 3.5 (P-Ch) nC
Switching Characteristics Td(on) VDD=15V , VGS=10V , RG=3.3 ID=6A 5.5 VDD=-15V , VGS=-10V , RG=3.3 ID=-6A 5.1 ns
Tr VDD=15V , VGS=10V , RG=3.3 ID=6A 14 VDD=-15V , VGS=-10V , RG=3.3 ID=-6A 15 ns
Switching Characteristics Td(off) VDD=15V , VGS=10V , RG=3.3 ID=6A 25 VDD=-15V , VGS=-10V , RG=3.3 ID=-6A 23 ns
Tf VDD=15V , VGS=10V , RG=3.3 ID=6A 12 VDD=-15V , VGS=-10V , RG=3.3 ID=-6A 11 ns
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2 VGS=0V , IS=-1A , TJ=25 -1.2 V

Package Information (PDFNWB5x6-8L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254 REF. 0.010 REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 1.470 1.870 0.058 0.074
D2 0.470 0.870 0.019 0.034
E1 3.375 3.575 0.133 0.141
D3 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270 TYP. 0.050 TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 to 12

2409302203_Siliup-SP4013CNK_C22385424.pdf
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