60V N Channel MOSFET Siliup SP60N01BGHTO Featuring Split Gate Trench Technology for Power Conversion
Key Attributes
Model Number:
SP60N01BGHTO
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
330A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
32pF
Number:
1 N-channel
Input Capacitance(Ciss):
7.397nF
Output Capacitance(Coss):
3.885nF
Pd - Power Dissipation:
355W
Gate Charge(Qg):
105nC@10V
Mfr. Part #:
SP60N01BGHTO
Package:
TOLL-8L
Product Description
Product Overview
The SP60N01BGHTO is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N01BGHTO
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| RDS(on) | RDS(on)TYP | @10V | 1.3 | m | ||
| Continuous Drain Current | ID | 330 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 330 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 220 | A | ||
| Pulsed Drain Current | IDM | 1320 | A | |||
| Single Pulse Avalanche Energy | EAS | 1892 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 355 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.35 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | 65 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | - | 1.3 | 1.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 7397 | - | pF |
| Output Capacitance | Coss | - | 3885 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 32 | - | pF | |
| Total Gate Charge | Qg | VDS=48V , VGS=10V , ID=30A | - | 105 | - | nC |
| Gate-Source Charge | Qgs | - | 20 | - | nC | |
| Gate-Drain Charge | Qg | - | 18 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=48V , VGS=10V , RG=2, ID=30A | - | 32.3 | - | nS |
| Rise Time | Tr | - | 52.1 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 91 | - | nS | |
| Fall Time | Tf | - | 27.8 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 330 | A | |
| Reverse Recovery Time | Trr | IS=150A, di/dt=100A/us, TJ=25 | - | 69 | - | nS |
| Reverse Recovery Charge | Qrr | - | 121 | - | nC | |
| Package Information (TOLL) | ||||||
| Symbol | Dimensions (mm) | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | |||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 BSC | |||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 BSC | |||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 REF. | |||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
2504101957_Siliup-SP60N01BGHTO_C22385349.pdf
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