NPN Transistor Slkor SS8050 with 25V Collector Emitter Voltage and 1.5A Continuous Collector Current
Key Attributes
Model Number:
SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
400@100mA,1V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
500mV@800mA,80mA
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
SS8050
Package:
SOT-23
Product Description
Product Overview
The SS8050 is an NPN transistor designed as a complementary component to the SS8550. It offers a continuous collector current of 1.5A and a collector power dissipation of 0.3W. With a junction temperature of 150C and storage temperature range of -55C to 150C, it is suitable for various electronic applications. Key electrical characteristics include a collector-emitter breakdown voltage of 25V and a DC current gain (hFE) ranging from 120 to 400 under specific test conditions.
Product Attributes
- Brand: SS8050 (Implied by datasheet reference)
- Type: NPN Transistor
- Complementary to: SS8550
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current - Continuous | IC | 1.5 | A | |||
| Collector Power Dissipation | PC | (TA=25) | 0.3 | W | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 0.1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCB=20V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A | ||
| DC current gain (hFE(1)) | hFE(1) | VCE=1V, IC= 100mA | 120 | 400 | ||
| DC current gain (hFE(2)) | hFE(2) | VCE=1V, IC= 800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=800mA, IB= 80mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=800mA, IB= 80mA | 1.2 | V | ||
| Transition frequency | fT | VCE=10V, IC= 50mA, f=30MHz | 100 | MHz |
hFE(1) Classification
| Rank | Range |
|---|---|
| L | 120-200 |
| H | 200-350 |
| J | 300-400 |
Pinout
SOT-23 Package:
- BASE
- EMITTER
- COLLECTOR
1912111437_Slkor-SS8050_C444722.pdf
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