High Current MOSFET Siliup SP4024CTM 40V Complementary Device in TO2524L Package for Load Switching
Key Attributes
Model Number:
SP4024CTM
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
23A;13A
RDS(on):
17mΩ@10V;38mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V;1.6V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF;92pF
Input Capacitance(Ciss):
834pF;915pF
Output Capacitance(Coss):
51pF;104pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
25nC@4.5V;24nC@4.5V
Mfr. Part #:
SP4024CTM
Package:
TO-252-4L
Product Description
Product Overview
The SP4024CTM is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. This lead-free product is available in a surface mount TO-252-4L package and is 100% tested for single pulse avalanche energy. It is suitable for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP4024CTM
- Package Type: TO-252-4L
- Certifications: Lead free product is acquired
- Marking: 4024C (Device Code), *: Week Code
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | P-Channel Conditions | Value | Units | |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40V | -40V | - | V | |
| On-Resistance (Typical) | RDS(on)TYP | 17m@10V | 38m@-10V | - | m | |
| On-Resistance (Typical) | RDS(on)TYP | 24m@4.5V | 50m@-4.5V | - | m | |
| Continuous Drain Current | ID | 23A | -13A | - | A | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | -40 | - | V | |
| Gate-Source Voltage | VGS | 20 | 20 | - | V | |
| Continuous Drain Current (TC=25) | ID | 23 | -13 | - | A | |
| Continuous Drain Current (TC=100) | ID | 15 | -9 | - | A | |
| Pulsed Drain Current | IDM | 92 | -52 | - | A | |
| Single Pulse Avalanche Energy | EAS | 25 | 20 | - | mJ | |
| Power Dissipation (TC=25) | PD | 30 | - | W | ||
| Thermal Resistance Junction-to-Case | RJC | 4.2 | - | /W | ||
| Storage Temperature Range | TSTG | -55 to 150 | - | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | - | |||
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | - | 40 | V | |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID=250uA | - | 1 to 2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=8A | - | 17 to 22 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=6A | - | 24 to 32 | m | |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 834 | pF | |
| Output Capacitance | Coss | - | - | 51 | pF | |
| Reverse Transfer Capacitance | Crss | - | - | 45 | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=4.5V , ID=5A | - | 25 | nC | |
| Gate-Source Charge | Qgs | - | - | 6 | - | |
| Gate-Drain Charge | Qgd | - | - | 5 | - | |
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V , RG=3, ID=5A | - | 8 | nS | |
| Rise Time | Tr | - | - | 7 | - | |
| Turn-Off Delay Time | Td(off) | - | - | 26 | - | |
| Fall Time | Tf | - | - | 4 | - | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | - | - | 23 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 10 | nS | |
| Reverse Recovery Charge | Qrr | - | - | 5 | nC | |
| P-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | - | VGS=0V , ID=-250uA | -40 | V | |
| Drain-Source Leakage Current | IDSS | - | VDS=-32V , VGS=0V , TJ=25 | -1 | uA | |
| Gate-Source Leakage Current | IGSS | - | VGS=20V , VDS=0V | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | - | VGS=VDS , ID =-250uA | -1 to -2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | - | VGS=-10V , ID=-5A | 38 to 45 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | - | VGS=-4.5V , ID=-4A | 50 to 60 | m | |
| Input Capacitance | Ciss | - | VDS=-15V , VGS=0V , f=1MHz | 915 | pF | |
| Output Capacitance | Coss | - | - | 104 | pF | |
| Reverse Transfer Capacitance | Crss | - | - | 92 | pF | |
| Total Gate Charge | Qg | - | VDS=-15V , VGS=-4.5V , ID=-1A | 24 | nC | |
| Gate-Source Charge | Qgs | - | - | 3 | - | |
| Gate-Drain Charge | Qg d | - | - | 4 | - | |
| Turn-On Delay Time | Td(on) | - | VDD=-15V, VGS=-10V , RG=3, ID=-1A | 11 | nS | |
| Rise Time | Tr | - | - | 17 | - | |
| Turn-Off Delay Time | Td(off) | - | - | 55 | - | |
| Fall Time | Tf | - | - | 19 | - | |
| Diode Forward Voltage | VSD | - | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | - | - | -13 | A | |
| Reverse Recovery Time | Trr | - | IS=-5A, di/dt=100A/us, TJ=25 | 13 | nS | |
| Reverse Recovery Charge | Qrr | - | - | 7 | nC | |
| Order Information | ||||||
| Device | Package | Unit/Tape | - | - | - | |
| SP4024CTM | TO-252-4L | 2500 | - | - | - | |
| Package Information (TO-252-4L Dimensions in Millimeters) | ||||||
| Symbol | Dimensions | Min. | Max. | - | - | |
| A | - | 2.20 | 2.40 | - | - | |
| A1 | - | 0 | 0.15 | - | - | |
| b | - | 0.40 | 0.60 | - | - | |
| b2 | - | 0.50 | 0.80 | - | - | |
| b3 | - | 5.20 | 5.50 | - | - | |
| c2 | - | 0.45 | 0.55 | - | - | |
| D | - | 5.40 | 5.80 | - | - | |
| D1 | - | 4.57 | - | - | - | |
| E | - | 6.40 | 6.80 | - | - | |
| E1 | - | 3.81 | - | - | - | |
| e | - | 1.27REF. | - | - | - | |
| F | - | 0.40 | 0.60 | - | - | |
| H | - | 9.40 | 10.20 | - | - | |
| L | - | 1.40 | 1.77 | - | - | |
| L1 | - | 2.40 | 3.00 | - | - | |
| L4 | - | 0.80 | 1.20 | - | - | |
2506271720_Siliup-SP4024CTM_C49257245.pdf
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