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quality Durable PNP Silicon Epitaxial Planar Transistor Slkor MMDT2907A for Amplifier and Switching Circuits factory
quality Durable PNP Silicon Epitaxial Planar Transistor Slkor MMDT2907A for Amplifier and Switching Circuits factory

Durable PNP Silicon Epitaxial Planar Transistor Slkor MMDT2907A for Amplifier and Switching Circuits

Key Attributes
Model Number: MMDT2907A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
300
Transition Frequency(fT):
200MHz
Type:
PNP
Vce Saturation(VCE(sat)):
1.6V
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-
Mfr. Part #:
MMDT2907A
Package:
SOT-363
Product Description

Product Overview

The MMDT2907A is a PNP Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. It offers a range of DC current gain values depending on the operating conditions and features specific cutoff currents and breakdown voltages. The transistor is suitable for various electronic circuits requiring amplification or switching functionalities.

Product Attributes

  • Brand: slkormicro
  • Model: MMDT2907A
  • Transistor Type: PNP Silicon Epitaxial Planar Transistor
  • Package: SOT-363
  • Pinout: 1. Emitter, 2. Base, 3. Collector, 4. Emitter, 5. Base, 6. Collector

Technical Specifications

Parameter Symbol Min. Max. Unit Conditions
Absolute Maximum Ratings
Collector Base Voltage -VCBO 60 V (Ta = 25 C)
Collector Emitter Voltage -VCEO 60 V (Ta = 25 C)
Emitter Base Voltage -VEBO 5 V (Ta = 25 C)
Collector Current -IC 600 mA (Ta = 25 C)
Power Dissipation Ptot 200 mW (Ta = 25 C)
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 +150 C
Characteristics
DC Current Gain hFE 75 - - -VCE = 10 V, -IC = 0.1 mA (Ta = 25 C)
DC Current Gain hFE 100 - - -VCE = 10 V, -IC = 1 mA (Ta = 25 C)
DC Current Gain hFE 100 300 - -VCE = 10 V, -IC = 10 mA (Ta = 25 C)
DC Current Gain hFE 100 - - -VCE = 10 V, -IC = 150 mA (Ta = 25 C)
DC Current Gain hFE 50 - - -VCE = 10 V, -IC = 500 mA (Ta = 25 C)
Collector Base Cutoff Current -ICBO -100 nA -VCB = 50 V (Ta = 25 C)
Collector Emitter Cutoff Current -ICES -100 nA -VCE = 30 V (Ta = 25 C)
Emitter Base Cutoff Current -IEBO -100 nA -VEB = 3 V (Ta = 25 C)
Collector Base Breakdown Voltage -V(BR)CBO 60 - V -IC = 10 A (Ta = 25 C)
Collector Emitter Breakdown Voltage -V(BR)CEO 60 - V -IC = 10 mA (Ta = 25 C)
Emitter Base Breakdown Voltage -V(BR)EBO 5 - V -IE = 10 A (Ta = 25 C)
Collector Emitter Saturation Voltage -VCE(sat) 0.4 V -IC = 150 mA, -IB = 15 mA (Ta = 25 C)
Collector Emitter Saturation Voltage -VCE(sat) 1.6 V -IC = 500 mA, -IB = 50 mA (Ta = 25 C)
Base Emitter Saturation Voltage -VBE(sat) 1.3 V -IC = 150 mA, -IB = 15 mA (Ta = 25 C)
Base Emitter Saturation Voltage -VBE(sat) 2.6 V -IC = 500 mA, -IB = 50 mA (Ta = 25 C)
Transition Frequency fT 200 - MHz -VCE = 20 V, IE = 50 mA, f = 100 MHz (Ta = 25 C)
Collector Output Capacitance Cob 8 pF -VCB = 10 V, f = 100 KHz (Ta = 25 C)
Turn-on Time ton 50 ns -VCC = 30 V, -VBE(OFF) = 1.5 V, -IC = 150 mA, -IB1 = 15 mA (Ta = 25 C)
Delay Time td 10 ns -VCC = 30 V, -VBE(OFF) = 1.5 V, -IC = 150 mA, -IB1 = 15 mA (Ta = 25 C)
Rise Time tr 40 ns -VCC = 30 V, -VBE(OFF) = 1.5 V, -IC = 150 mA, -IB1 = 15 mA (Ta = 25 C)
Turn-off Time toff 100 ns -VCC = 30 V, -IC = 150 mA, IB1 = IB2 = -15 mA (Ta = 25 C)
Storage Time tstg 80 ns -VCC = 30 V, -IC = 150 mA, IB1 = IB2 = -15 mA (Ta = 25 C)
Fall Time tf 30 ns -VCC = 30 V, -IC = 150 mA, IB1 = IB2 = -15 mA (Ta = 25 C)
Dimensions (mm)
Package SOT-363
A 1.1 1.3 mm
A1 0.1 0.30 mm
bp 0.20 0.45 mm
c 0.15 0.25 mm
D 1.8 2.2 mm
E 1.35 1.75 mm
e 0.65 mm
e1 1.15 1.35 mm
HE 2.0 2.4 mm
Lp 0.15 0.35 mm
Q 0.10 0.30 mm
w 0.25 0.40 mm
v 0.10 0.20 mm
y 0.10 mm

2208041800_Slkor-MMDT2907A_C5122540.pdf

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