Surface Mount 40V P Channel MOSFET Siliup SP40P08NK with Halogen Free and Single Pulse Avalanche Test

Key Attributes
Model Number: SP40P08NK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
RDS(on):
8.6mΩ@10V;13mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
289pF
Number:
1 P-Channel
Output Capacitance(Coss):
329pF
Input Capacitance(Ciss):
3.8nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
69nC@10V
Mfr. Part #:
SP40P08NK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP40P08NK is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient surface mounting, this ROHS Compliant & Halogen-Free component features fast switching speeds and is 100% tested for single pulse avalanche energy. It is ideal for applications such as DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP40P08NK
  • Package Type: PDFN5X6-8L
  • Certifications: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol Conditions Rating Unit
Product Summary
Drain-Source Voltage V(BR)DSS -40 V
RDS(on) Typ @-10V 8.6 m
RDS(on) Typ @-4.5V 13 m
Continuous Drain Current ID -40 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25) -40 V
Gate-Source Voltage VGSS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25C) -40 A
Continuous Drain Current ID (Tc=100C) -27 A
Pulse Drain Current Tested IDM -160 A
Single pulsed avalanche energy EAS 169 mJ
Power Dissipation PD (Tc=25C) 75 W
Thermal Resistance Junction-to-Case RJC 1.67 C/W
Storage Temperature Range TSTG -55 to 150 C
Operating Junction Temperature Range TJ -55 to 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -40 V
Drain-Source Leakage Current IDSS VDS=-32V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.2 to -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =-10V, ID =-10A 8.6 to 11 m
Static Drain-Source On-Resistance RDS(ON) VGS =-4.5V, ID =-8A 13 to 18 m
Input Capacitance Ciss VDS=-20V , VGS=0V , f=1MHz 3800 pF
Output Capacitance Coss VDS=-20V , VGS=0V , f=1MHz 329 pF
Reverse Transfer Capacitance Crss VDS=-20V , VGS=0V , f=1MHz 289 pF
Total Gate Charge Qg VDS=-20V , VGS=-10V , ID=-20A 69 nC
Gate-Source Charge Qgs VDS=-20V , VGS=-10V , ID=-20A 11 nC
Gate-Drain Charge Qg d VDS=-20V , VGS=-10V , ID=-20A 13 nC
Turn-On Delay Time Td(on) VDD=-20V, VGS=-10V , RG=3, ID=-20A 11 nS
Rise Time Tr VDD=-20V, VGS=-10V , RG=3, ID=-20A 81 nS
Turn-Off Delay Time Td(off) VDD=-20V, VGS=-10V , RG=3, ID=-20A 95 nS
Fall Time Tf VDD=-20V, VGS=-10V , RG=3, ID=-20A 73 nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 1.2 V
Maximum Body-Diode Continuous Current IS -40 A
Reverse recover time Trr IS=-20A, di/dt=100A/us, TJ=25 21 nS
Reverse recovery charge Qrr IS=-20A, di/dt=100A/us, TJ=25 12 nC
Package Information (PDFN5X6-8L)
Dimension Symbol Min. (mm) Max. (mm) Min. (in) Max. (in)
A A 0.900 1.000 0.035 0.039
A3 A3 0.254REF. 0.010REF.
D D 4.944 5.096 0.195 0.201
E E 5.974 6.126 0.235 0.241
D1 D1 3.910 4.110 0.154 0.162
E1 E1 3.375 3.575 0.133 0.141
D2 D2 4.824 4.976 0.190 0.196
E2 E2 5.674 5.826 0.223 0.229
k k 1.190 1.390 0.047 0.055
b b 0.350 0.450 0.014 0.018
e e 1.270TYP. 0.050TYP.
L L 0.559 0.711 0.022 0.028
L1 L1 0.424 0.576 0.017 0.023
H H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP40P08NK_C41355190.pdf

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