Surface Mount 40V P Channel MOSFET Siliup SP40P08NK with Halogen Free and Single Pulse Avalanche Test
Product Overview
The SP40P08NK is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient surface mounting, this ROHS Compliant & Halogen-Free component features fast switching speeds and is 100% tested for single pulse avalanche energy. It is ideal for applications such as DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP40P08NK
- Package Type: PDFN5X6-8L
- Certifications: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Conditions | Rating | Unit | |
|---|---|---|---|---|---|
| Product Summary | |||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | ||
| RDS(on) Typ | @-10V | 8.6 | m | ||
| RDS(on) Typ | @-4.5V | 13 | m | ||
| Continuous Drain Current | ID | -40 | A | ||
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage | VDSS | (Ta=25) | -40 | V | |
| Gate-Source Voltage | VGSS | (Ta=25) | 20 | V | |
| Continuous Drain Current | ID | (Tc=25C) | -40 | A | |
| Continuous Drain Current | ID | (Tc=100C) | -27 | A | |
| Pulse Drain Current Tested | IDM | -160 | A | ||
| Single pulsed avalanche energy | EAS | 169 | mJ | ||
| Power Dissipation | PD | (Tc=25C) | 75 | W | |
| Thermal Resistance Junction-to-Case | RJC | 1.67 | C/W | ||
| Storage Temperature Range | TSTG | -55 to 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | C | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | V | |
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | -1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.2 to -2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-10A | 8.6 to 11 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-8A | 13 to 18 | m | |
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | 3800 | pF | |
| Output Capacitance | Coss | VDS=-20V , VGS=0V , f=1MHz | 329 | pF | |
| Reverse Transfer Capacitance | Crss | VDS=-20V , VGS=0V , f=1MHz | 289 | pF | |
| Total Gate Charge | Qg | VDS=-20V , VGS=-10V , ID=-20A | 69 | nC | |
| Gate-Source Charge | Qgs | VDS=-20V , VGS=-10V , ID=-20A | 11 | nC | |
| Gate-Drain Charge | Qg d | VDS=-20V , VGS=-10V , ID=-20A | 13 | nC | |
| Turn-On Delay Time | Td(on) | VDD=-20V, VGS=-10V , RG=3, ID=-20A | 11 | nS | |
| Rise Time | Tr | VDD=-20V, VGS=-10V , RG=3, ID=-20A | 81 | nS | |
| Turn-Off Delay Time | Td(off) | VDD=-20V, VGS=-10V , RG=3, ID=-20A | 95 | nS | |
| Fall Time | Tf | VDD=-20V, VGS=-10V , RG=3, ID=-20A | 73 | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | -40 | A | ||
| Reverse recover time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 21 | nS | |
| Reverse recovery charge | Qrr | IS=-20A, di/dt=100A/us, TJ=25 | 12 | nC | |
| Package Information (PDFN5X6-8L) | |||||
| Dimension | Symbol | Min. (mm) | Max. (mm) | Min. (in) | Max. (in) |
| A | A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | A3 | 0.254REF. | 0.010REF. | ||
| D | D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | D1 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | D2 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | e | 1.270TYP. | 0.050TYP. | ||
| L | L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 | ||
2504101957_Siliup-SP40P08NK_C41355190.pdf
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