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quality Durable NPN Silicon Transistor Slkor BC847BW Suitable for Multiple Electronic Circuit Applications factory
quality Durable NPN Silicon Transistor Slkor BC847BW Suitable for Multiple Electronic Circuit Applications factory

Durable NPN Silicon Transistor Slkor BC847BW Suitable for Multiple Electronic Circuit Applications

Key Attributes
Model Number: BC847BW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
DC Current Gain:
450@2mA,5V
Transition Frequency(fT):
100MHz
Type:
NPN
Vce Saturation(VCE(sat)):
600mV
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC847BW
Package:
SOT-323
Product Description

Product Overview

The BC846W-BC850W series are NPN silicon epitaxial planar transistors designed for general purpose and switching applications. These transistors offer a range of voltage and current handling capabilities, making them suitable for various electronic circuits.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Brand: slkormicro (implied by URL)

Technical Specifications

Parameter Symbol BC846W BC847W BC848W BC849W BC850W Unit
Absolute Maximum Ratings (Ta = 25 ℃)
Collector Base Voltage VCBO 80 50 30 30 50 V
Collector Emitter Voltage VCEO 65 45 30 30 45 V
Emitter Base Voltage VEBO 6 6 5 5 5 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg - 55 to + 150 ℃
Characteristics (at Ta = 25 ℃)
DC Current Gain at VCE = 5 V, IC = 2 mA hFE 110-220 200-450 420-800 - - -
hFE - - - - - -
hFE - - - - - -
Collector Base Voltage at IC = 10 µA VCBO 80 50 30 30 50 V
Collector Emitter Voltage at IC = 10 mA VCEO 65 45 30 30 45 V
Emitter Base Voltage at IE = 1 µA VEBO 6 6 5 5 5 V
Collector Base Cutoff Current at VCB = 30 V ICBO - 15 nA
Emitter Base Cutoff Current at VEB = 5 V IEBO - 100 nA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA VCE(sat) - 0.25 V
IC = 100 mA, IB = 5 mA VCE(sat) - 0.6 V
Base Emitter Voltage at VCE = 5 V, IC = 2 mA VBE 0.58 V
VCE = 5 V, IC = 10 mA VBE 0.7 - 0.77 V
Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz fT 100 MHz
Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz Cob - 4.5 pF
Symbol Dimension in Millimeters Min Max
A 0.90 1.00
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.45
C 0.09 0.15
D 2.00 2.20
E 1.15 1.35
HE 2.15 2.55
Lp 0.25 0.46
θ 0º 6º

2210091830_Slkor-BC847BW_C5185928.pdf

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