switching amplifier transistor Slkor 2SD1624-T NPN type designed for electronic circuit integration
Key Attributes
Model Number:
2SD1624-T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
DC Current Gain:
200@100mA,2V
Transition Frequency(fT):
150MHz
Vce Saturation(VCE(sat)):
500mV@2A,100mA
Type:
NPN
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SD1624-T
Package:
SOT-89
Product Description
Product Overview
The 2SD1624 is an NPN transistor designed for switching and amplifier applications. It features a low collector saturation voltage and serves as a complementary type to the PNP transistor 2SB1124. This transistor is suitable for various electronic circuits requiring reliable amplification and switching capabilities.
Product Attributes
- Type: NPN Transistor
- Complementary Type: 2SB1124
- Package: SOT-89
- Marking Code: ●
Technical Specifications
| Parameter | Symbol | Value | Unit | |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified) | ||||
| Collector Base Voltage | VCBO | 60 | V | |
| Collector Emitter Voltage | VCEO | 50 | V | |
| Emitter Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 3 | A | |
| Pulsed Collector Current | ICP | 6 | A | |
| Maximum Power Dissipation | PD | 500 | mW | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature Range | TSTG | -55 to +150 | ||
| Electrical Characteristics (TA=25) | ||||
| DC Current Gain at VCE = 2 V, IC = 100 mA (Group R) | HFE | 100 | -- | |
| DC Current Gain at VCE = 2 V, IC = 100 mA (Group S) | HFE | 140 | -- | |
| DC Current Gain at VCE = 2 V, IC = 100 mA (Group T) | HFE | 200 | -- | |
| Current Gain Group at VCE = 2 V, IC = 3 A (Group H) | HFE | 200 | -- | |
| Current Gain Group at VCE = 2 V, IC = 3 A (Group R) | HFE | 280 | -- | |
| Current Gain Group at VCE = 2 V, IC = 3 A (Group S) | HFE | 400 | -- | |
| Collector Base Cutoff Current at VCB = 40 V | ICBO | -- | 1 | A |
| Emitter Base Cutoff Current at VEB = 4 V | IEBO | -- | 1 | A |
| Collector Base Breakdown Voltage at IC = 10 A | V(BR)CBO | 60 | -- | V |
| Collector Emitter Breakdown Voltage at IC = 1 mA | V(BR)CEO | 50 | -- | V |
| Emitter Base Breakdown Voltage at IE = 10 A | V(BR)EBO | 6 | -- | V |
| Collector Emitter Saturation Voltage at IC = 2 A, IB = 100 mA | VCE(sat) | -- | 0.5 | V |
| Base Emitter Saturation Voltage at IC = 2 A, IB = 100 mA | VBE(sat) | -- | 1.2 | V |
| Transition Frequency at VCE = 10 V, IC = 50 mA | FT | -- | 150 | MHz |
| Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz | Cob | -- | 25 | pF |
| Models | ||||
| 2SD1624 | -- | -- | -- | |
| 2SD1624-R | -- | 1624A | -- | |
| 2SD1624-S | -- | 1624B | -- | |
| 2SD1624-T | -- | 1624C | -- | |
Package Outline: SOT-89
Dimensions in mm
Conditions of Soldering and Storage:
- Recommended Reflow Soldering: Recommended peak temperature is over 245 C. Adjustments to time length of peak temperature, time length of soldering, and thickness of solder paste may be required if peak temperature is below 245 C.
- Hand Soldering: Temperature: 370 C, Time: 3s max., Times: one time.
- Storage Conditions: Temperature: 5 to 40 C, Humidity: 30 to 80% RH.
- Recommended Storage Period: One year after manufacturing.
2505200951_Slkor-2SD1624-T_C2965562.pdf
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