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quality High Voltage PNP Silicon Epitaxial Planar Transistor Slkor A1015 Complementary to C1815 Transistor factory
quality High Voltage PNP Silicon Epitaxial Planar Transistor Slkor A1015 Complementary to C1815 Transistor factory

High Voltage PNP Silicon Epitaxial Planar Transistor Slkor A1015 Complementary to C1815 Transistor

Key Attributes
Model Number: A1015
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
400@2mA,6V
Transition Frequency(fT):
80MHz
Vce Saturation(VCE(sat)):
300mV
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
A1015
Package:
SOT-23
Product Description

Product Overview

The A1015 is a PNP Silicon Epitaxial Planar Transistor designed for high voltage and high current applications. It offers excellent hFE linearity and is complementary to the C1815 transistor. This device is suitable for various electronic circuits requiring reliable amplification and switching capabilities.

Product Attributes

  • Brand: SLKORMICRO
  • Type: PNP Silicon Epitaxial Planar Transistor
  • Complementary to: C1815

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current - Continuous IC -150 mA
Collector Power Dissipation PC (Ta=25) 200 mW
Junction Temperature TJ 150
Storage Temperature Tstg -55 +150
Collector-base breakdown voltage V(BR)CBO IC= -100uA, IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE= -100 uA, IC=0 -5 V
Collector cut-off current ICBO VCB=-50V ,IE=0 -0.1 -1 uA
Collector cut-off current ICEO VCE= -50V , IB=0 -1 -10 uA
Emitter cut-off current IEBO VEB=- 5V, IC=0 -0.1 -1 uA
DC current gain hFE VCE=-6V,IC= -2mA 130 400
Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 -1.2 V
Transition frequency fT VCE=-10V,IC= -1mA, f=30MHz 80 MHz
hFE Rank L 130 200
hFE Rank H 200 400
SOT-23 Package Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 1.800 2.000 0.071 0.079
e1 0.300 0.500 0.012 0.020
L 0.550 REF 0.022 REF
0 8 0 8
Pinout 1. BASE 2. EMITTER 3. COLLECTOR

2005211106_Slkor-A1015_C556172.pdf

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