PNP transistor Slkor MMBT5401 designed for high voltage applications in general purpose electronics
Key Attributes
Model Number:
MMBT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
60@10mA,5V
Transition Frequency(fT):
300MHz
Number:
1 PNP
Vce Saturation(VCE(sat)):
500mV
Type:
PNP
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-
Mfr. Part #:
MMBT5401
Package:
SOT-23
Product Description
Product Overview
The MMBT5401 is a PNP high-voltage transistor designed for general-purpose applications. It offers robust performance with specified breakdown voltages and current gain characteristics. This transistor is suitable for various electronic circuits requiring reliable amplification and switching capabilities.
Product Attributes
- Brand: SLKORMICRO
- Model: MMBT5401
- Package: SOT-23
Technical Specifications
| Maximum Ratings | Symbol | Rating | Unit | |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -150 | Vdc | |
| Collector-Base Voltage | VCBO | -160 | Vdc | |
| Emitter-Base Voltage | VEBO | -6.0 | Vdc | |
| Collector CurrentContinuous | Ic | -500 | mAdc | |
| Thermal Characteristics | Symbol | Max | Unit | |
|---|---|---|---|---|
| Total Device Dissipation FR-5 Board (TA=25) | Derate above 25 | PD | 225 1.8 | mW mW/ |
| Thermal Resistance Junction to Ambient | RJA | 556 | /W | |
| Total Device Dissipation Alumina Substrate (TA=25) | Derate above 25 | PD | 300 2.4 | mW mW/ |
| Thermal Resistance Junction to Ambient | RJA | 417 | /W | |
| Junction and Storage Temperature | TJ,Tstg | 150, -55 to +150 | ||
| Electrical Characteristics (TA=25 unless otherwise noted) | Symbol | Min | Max | Unit | |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (Ic=-1.0mAdc,IB=0) | V(BR)CEO | -150 | Vdc | ||
| Collector-Base Breakdown Voltage (Ic=-100Adc,IE=0) | V(BR)CBO | -160 | Vdc | ||
| Emitter-Base Breakdown Voltage (IE=-10Adc,Ic=0) | V(BR)EBO | -6.0 | Vdc | ||
| Emitter Cutoff Current (VEB=-3.0Vdc,Ic=0) | IEBO | -50 | nAdc | ||
| Collector Cutoff Current (VCB=-120Vdc,IE=0) | ICBO | -50 | nAdc | ||
| DC Current Gain | (Ic=-1.0mAdc,VCE=-5.0Vdc) | HFE | 50 | ||
| (Ic=-10mAdc,VCE=-5.0Vdc) | HFE | 60 | 240 | ||
| (Ic=-50mAdc,VCE=-5.0Vdc) | HFE | 30 | |||
| Collector-Emitter Saturation Voltage | (Ic=-10mAdc, IB=-1.0mAdc) | VCE(sat) | -0.2 | Vdc | |
| (Ic=-50mAdc, IB=-10mAdc) | VCE(sat) | -0.5 | Vdc | ||
| Base-Emitter Saturation Voltage | (Ic=-10mAdc, IB=-1.0mAdc) | VBE(sat) | -1.0 | Vdc | |
| (Ic=-50mAdc, IB=-5.0mAdc) | VBE(sat) | -1.0 | Vdc | ||
| Current-Gain-Bandwidth Product (Ic=-10mAdc,VCE=-10Vdc,f=100MHz) | fT | 100 | 300 | MHz | |
| Output Capacitance (VCB=-10.0Vdc, IE=0, f=1.0MHz) | Cobo | 6.0 | pF | ||
| Small-Signal Current Gain (VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz) | hfe | 40 | 200 | ||
| Noise Figure (VCE=-5.0Vdc, IC=-200Adc,Rs=1.0kf=1.0KHz) | NF | 8.0 | dB | ||
| SOT-23 Package Information | ||
|---|---|---|
| Symbol | MIN. | MAX. |
| A | 0.900 | 1.150 |
| A1 | 0.000 | 0.100 |
| A2 | 0.900 | 1.050 |
| b | 0.300 | 0.500 |
| c | 0.080 | 0.150 |
| D | 2.800 | 3.000 |
| E | 1.200 | 1.400 |
| E1 | 2.250 | 2.550 |
| e | 0.950TYP | |
| e1 | 1.800 | 2.000 |
| L | 0.550REF | |
| L1 | 0.300 | 0.500 |
| 0 | 8 | |
2409302300_Slkor-MMBT5401_C400800.pdf
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