Complementary MOSFET 40V Siliup SP4011CTM in TO2524L package for power management and high current applications
Key Attributes
Model Number:
SP4011CTM
Product Custom Attributes
Drain To Source Voltage:
40V;40V
Current - Continuous Drain(Id):
50A;24A
RDS(on):
8mΩ@10V;11mΩ@4.5V;14mΩ@10V;18mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF;112pF
Number:
-
Output Capacitance(Coss):
91pF;204pF
Input Capacitance(Ciss):
1.434nF;1.415nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
25nC@4.5V;23.5nC@4.5V
Mfr. Part #:
SP4011CTM
Package:
TO-252-4L
Product Description
Product Overview
The SP4011CTM is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free product is available in a surface mount TO-252-4L package. It features 100% single pulse avalanche energy testing and is suitable for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Complementary MOSFET
- Package: TO-252-4L
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Value | P-Channel Conditions | P-Channel Value | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40V | -40V | V | ||
| RDS(on) Typ | RDS(on) | @10V | 8m | @-10V | 14m | m |
| RDS(on) Typ | RDS(on) | @4.5V | 11m | @-4.5V | 18m | m |
| Continuous Drain Current | ID | @TC=25 | 50A | @TC=25 | -24A | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | N-Channel | 40 | P-Channel | -40 | V |
| Gate-Source Voltage | VGS | 20 | 20 | V | ||
| Continuous Drain Current (TC=25) | ID | N-Channel | 50 | P-Channel | -24 | A |
| Continuous Drain Current (TC=100) | ID | N-Channel | 33 | P-Channel | -16 | A |
| Pulsed Drain Current | IDM | N-Channel | 200 | P-Channel | -96 | A |
| Single Pulse Avalanche Energy | EAS | N-Channel (VDD=20V, VGS=10V, L=0.5mH, RG=25) | 72 | P-Channel (VDD=-20V, VGS=-10V, L=0.5mH, RG=25) | 90 | mJ|
| Power Dissipation (TC=25) | PD | 48 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 2.6 | /W | |||
| Storage Temperature Range | TSTG | -55 to 150 | ||||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||||
| N-Channel Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=32V, VGS=0V, TJ=25 | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1 to 2.5 | V | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=7A | 8 to 12 | m | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=6A | 11 to 18 | m | ||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 1434 | pF | ||
| Output Capacitance | Coss | 91 | pF | |||
| Reverse Transfer Capacitance | Crss | 75 | pF | |||
| Total Gate Charge | Qg | VDS=32V, VGS=4.5V, ID=7A | 25 | nC | ||
| Gate-Source Charge | Qgs | 6.3 | nC | |||
| Gate-Drain Charge | Qgd | 4.6 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V, RG=3, ID=7A | 7.8 | nS | ||
| Rise Time | Tr | 10.7 | nS | |||
| Turn-Off Delay Time | Td(off) | 25.8 | nS | |||
| Fall Time | Tf | 4.6 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 50 | A | |||
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | 12.5 | nS | ||
| Reverse Recovery Charge | Qrr | 9 | nC | |||
| P-Channel Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-32V, VGS=0V, TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=-250uA | -1 to -2.5 | V | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-5A | 14 to 18 | m | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-4A | 18 to 24 | m | ||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 1415 | pF | ||
| Output Capacitance | Coss | 204 | pF | |||
| Reverse Transfer Capacitance | Crss | 112 | pF | |||
| Total Gate Charge | Qg | VDS=-15V, VGS=-4.5V, ID=-1A | 23.5 | nC | ||
| Gate-Source Charge | Qgs | 3.4 | nC | |||
| Gate-Drain Charge | Qg | 4.3 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V, RG=3, ID=-1A | 11 | nS | ||
| Rise Time | Tr | 16.7 | nS | |||
| Turn-Off Delay Time | Td(off) | 35 | nS | |||
| Fall Time | Tf | 19 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -24 | A | |||
| Reverse Recovery Time | Trr | IS=-15A, di/dt=100A/us, TJ=25 | 28 | nS | ||
| Reverse Recovery Charge | Qrr | 36 | nC | |||
| Package Information (TO-252-4L) | ||||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | ||||
| A | 2.20 | 2.40 | ||||
| A1 | 0 | 0.15 | ||||
| b | 0.40 | 0.60 | ||||
| b2 | 0.50 | 0.80 | ||||
| b3 | 5.20 | 5.50 | ||||
| c2 | 0.45 | 0.55 | ||||
| D | 5.40 | 5.80 | ||||
| D1 | 4.57 | - | ||||
| E | 6.40 | 6.80 | ||||
| E1 | 3.81 | - | ||||
| e | 1.27 REF. | |||||
| F | 0.40 | 0.60 | ||||
| H | 9.40 | 10.20 | ||||
| L | 1.40 | 1.77 | ||||
| L1 | 2.40 | 3.00 | ||||
| L4 | 0.80 | 1.20 | ||||
2504101957_Siliup-SP4011CTM_C41355093.pdf
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