Fast switching 30V P Channel MOSFET Siliup SP30P11TH with low gate charge and avalanche energy tested

Key Attributes
Model Number: SP30P11TH
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
1 P-Channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
1.915nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
SP30P11TH
Package:
TO-252-2L
Product Description

Product Overview

The SP30P11TH is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficiency and performance, it features fast switching, low gate charge, and low Rdson. Its robust design is validated by 100% single pulse avalanche energy testing. This MOSFET is ideal for applications such as DC-DC converters and load switching.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP30P11TH
  • Device Code: 30P11

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS -30 V
RDS(on)TYP @-10V 11 m
RDS(on)TYP @-4.5V 15 m
ID -45 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25,unless otherwise noted) -30 V
Gate-Source Voltage VGS (Ta=25,unless otherwise noted) 12 V
Continuous Drain Current (TC=25) ID (Ta=25,unless otherwise noted) -45 A
Continuous Drain Current (TC=100) ID (Ta=25,unless otherwise noted) -30 A
Pulsed Drain Current IDM (Ta=25,unless otherwise noted) -180 A
Single Pulse Avalanche Energy EAS (Ta=25,unless otherwise noted) 183 mJ
Power Dissipation (TC=25) PD (Ta=25,unless otherwise noted) 45 W
Thermal Resistance Junction-to-Case RJC (Ta=25,unless otherwise noted) 2.8 /W
Storage Temperature Range TSTG (Ta=25,unless otherwise noted) -55 150
Operating Junction Temperature Range TJ (Ta=25,unless otherwise noted) -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-20A 11 14 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-15A 15 20 m
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz 1915 pF
Output Capacitance Coss VDS=-15V , VGS=0V , f=1MHz 300 pF
Reverse Transfer Capacitance Crss VDS=-15V , VGS=0V , f=1MHz 210 pF
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-5A 25 nC
Gate-Source Charge Qgs VDS=-15V , VGS=-10V , ID=-5A 5 nC
Gate-Drain Charge Qg VDS=-15V , VGS=-10V , ID=-5A 6 nC
Turn-On Delay Time Td(on) VDD=-15V, VGS=-10V ,RG=3, ID=-10A 9 nS
Rise Time Tr VDD=-15V, VGS=-10V ,RG=3, ID=-10A 11 nS
Turn-Off Delay Time Td(off) VDD=-15V, VGS=-10V ,RG=3, ID=-10A 44 nS
Fall Time Tf VDD=-15V, VGS=-10V ,RG=3, ID=-10A 21 nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 1.2 V
Maximum Body-Diode Continuous Current IS -45 A
Reverse Recovery Time Trr IS=-2.8A, di/dt=100A/us, Tj=25 64 nS
Reverse Recovery Charge Qrr IS=-2.8A, di/dt=100A/us, Tj=25 25 nC
Package Information (TO-252)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

2504101957_Siliup-SP30P11TH_C41355020.pdf

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