NPN Silicon transistor Slkor 2SC5824-R designed for switching performance and low frequency amplification applications

Key Attributes
Model Number: 2SC5824-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
DC Current Gain:
390@100mA,2V
Transition Frequency(fT):
200MHz
Type:
NPN
Vce Saturation(VCE(sat)):
200mV
Pd - Power Dissipation:
2W
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-
Mfr. Part #:
2SC5824-R
Package:
SOT-89
Product Description

Product Overview

The 2SC5824 is an NPN Silicon epitaxial planar transistor designed for high-speed switching applications. It offers low saturation voltage and strong discharge power for inductive and capacitive loads. This transistor complements the 2SA2071 and is suitable for low-frequency amplification and high-speed switching scenarios.

Product Attributes

  • Brand: SLKORmicro
  • Model: 2SC5824
  • Structure: NPN Silicon epitaxial planar transistor
  • Package: SOT-89

Technical Specifications

Parameter Symbol Limit(s) Unit Conditions
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 60 V
Emitter-base voltage VEBO 6 V
Collector current IC 3 A
Collector current (pulsed) ICP 6 A Pw=100ms
Power dissipation PC 500 mW Each terminal mounted on a recommended land.
Power dissipation PC 2.0 W Mounted on a 40x40x0.7(mm) ceramic substrate
Junction temperature Tj 150 C
Range of storage temperature Tstg -55~ +150 C
Collector-base breakdown voltage BVCBO 60 V IC=100A
Collector-emitter breakdown voltage BVCEO 60 V IC=1mA
Emitter-base breakdown voltage BVEBO 6 V IE=100A
Collector cut-off current ICBO 1.0 A VCB=40V
Emitter cut-off current IEBO 1.0 A VEB=4V
Collector-emitter saturation voltage VCE(sat) 200 (Typ.) mV IC=2A, IB=200mA
Collector-emitter saturation voltage VCE(sat) 500 (Max.) mV IC=2A, IB=200mA
DC current gain hFE 120-390 - VCE=2V, IC=100mA
Transition frequency fT 200 (Typ.) MHz VCE=10V, IE=-100mA, f=10MHz
Collector output capacitance Cob 20 (Typ.) pF VCB=10V, IE=0mA, f=1MHz
Turn-on time Ton 50 (Typ.) ns IC=3A, IB1=300mA, IB2=-300mA, VCC=25V
Storage time Tstg 150 (Typ.) ns IC=3A, IB1=300mA, IB2=-300mA, VCC=25V
Fall time Tf 30 (Typ.) ns IC=3A, IB1=300mA, IB2=-300mA, VCC=25V
hFE RANK Q 120-270
hFE RANK R 180-390
Package Outline Dimensions (SOT-89) A (mm) c (mm) D (mm) E (mm) HE (mm) Lp (mm) w (mm) e (mm) e1 (mm) bp2 (mm) bp1 (mm) bp3 (mm)
Min. 1.4 0.23 4.4 2.4 3.75 3.0 0.13 1.2 0.40 0.53 1.4
Typ. 1.6 0.44 4.6 2.6 4.25 3.0
Max.

2208041800_Slkor-2SC5824-R_C5122611.pdf

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