half bridge light ballast transistor Slkor SL5304DCP with integrated free wheeling diode and 400 volt BVCEO rating

Key Attributes
Model Number: SL5304DCP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
100uA
DC Current Gain:
32@2A,5V
Number:
1 NPN
Vce Saturation(VCE(sat)):
1.5V@4A,1A
Type:
NPN
Pd - Power Dissipation:
35W
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
400V
Mfr. Part #:
SL5304DCP
Package:
TO-252
Product Description

Product Overview

The SL5304I/DCP is a high-voltage NPN transistor featuring an integrated free-wheeling diode for efficient anti-saturation operation. Designed for applications requiring low base drive and minimal storage-time spread, this silicon triple-diffused transistor is suitable for half-bridge light ballast applications. It is available in TO-251 and TO-252 packages.

Product Attributes

  • Type: NPN Silicon Transistor
  • Structure: Silicon Triple Diffused Type
  • Integrated Component: Anti-parallel Collector-Emitter Diode
  • Brand: SLKORMicro (implied by URL)

Technical Specifications

PRODUCT SUMMARY
BVCEO BVCBO IC VCE(SAT)
400V 700V 4A 1.5V @ IC / IB = 4A / 1A
Ordering Information
Part No. Package Packing
SL5304DCP TO-252 2.5Kpcs / 13 Reel
SL5304I TO-251 75pcs / Tube
Absolute Maximum Rating (Ta = 25C unless otherwise noted)
Parameter Symbol Limit Unit
Collector-Base Voltage VCBO 700 V
Collector-Emitter Voltage @ VBE=0V VCES 700 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 9 V
Collector Current IC 4 A
Collector Peak Current (tp <5ms) ICM 8 A
Base Current IB 2 A
Base Peak Current (tp <5ms) IBM 4 A
Power Total Dissipation @ Tc=25C PDTOT 35 W
Maximum Operating Junction Temperature TJ +150 C
Storage Temperature Range TSTG -55 to +150 C
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case RJC 3.57 C/W
Thermal Resistance - Junction to Ambient RJA 68 C/W
Electrical Specifications (Ta = 25C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Static Collector-Base Voltage IC =1mA, IB =0 BVCBO -- -- 700 V
Collector-Emitter Breakdown Voltage IC =10mA, IE =0 BVCEO -- -- 400 V
Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO -- -- 9 V
Collector Cutoff Current VCB =700V, IE =0 ICBO -- -- 100 uA
Collector Cutoff Current VCE =400V, IB =0 ICEO -- -- 250 uA
Emitter Cutoff Current VEB =7V, IC =0 IEBO -- -- 10 uA
Collector-Emitter Saturation Voltage IC =0.5A, IB =0.1A VCE(SAT)1 -- 0.25 0.7 V
IC =1A, IB =0.2A VCE(SAT)2 -- 0.5 1 V
IC =2.5A, IB =0.5A VCE(SAT)3 -- 1.2 1.5 V
IC =4A, IB =1A VCE(SAT)4 -- 0.5 -- V
Base-Emitter Saturation Voltage IC =1A, IB =0.2A VBE(SAT)1 -- -- 1.1 V
IC =2A, IB =0.5A VBE(SAT)2 -- -- 1.2 V
DC Current Gain VCE =5V, IC =10mA Hfe 10 -- -- --
VCE =5V, IC =1A 17 -- 27 --
VCE =5V, IC =2A 12 -- 32 --
Forward Voltage Drop IF =2A Vf -- -- 2 V
Turn On Time tON -- 0.2 0.6 uS
Storage Time tSTG -- 3.0 4.5 uS
Fall Time VCC =250V, IC =1A, IB1=IB2=0.2A, tp=25uS, Duty Cycle<1% tf -- 0.2 0.3 uS
TO-252 Mechanical Drawing
DIM MILLIMETERS INCHES
MIN MAX MIN MAX
A 2.290 BSC 0.090 BSC
A1 4.600 BSC 0.180 BSC
B 7.000 7.200 0.275 0.283
C 6.000 6.200 0.236 0.244
D 6.400 6.604 0.252 0.260
E 2.210 2.387 0.087 0.094
F 0.010 0.127 0.000 0.005
G 5.232 5.436 0.206 0.214
G1 0.814 0.889 0.032 0.035
G2 0.814 0.889 0.032 0.035
H 0.508 REF 0.020 REF
I 0.900 1.500 0.035 0.059
J 2.743 REF 0.108 REF
K 0.660 0.094 0.026 0.037
L 1.397 1.651 0.055 0.065
M 1.100 REF 0.043 REF
TO-251 Mechanical Drawing
DIM MILLIMETERS INCHES
MIN MAX MIN MAX
A 2.190 2.380 0.0862 0.0937
A1 0.890 1.140 0.0350 0.0449
b 0.640 0.890 0.0252 0.0350
b1 0.760 1.140 0.0299 0.0449
b2 5.210 5.460 0.2051 0.2150
C 0.460 0.580 0.0181 0.0228
C1 0.460 0.580 0.0181 0.0228
D 5.970 6.100 0.2350 0.2402
E 6.350 6.730 0.2500 0.2650
e 2.280 BSC 0.0898 BSC
L 8.890 9.650 0.3500 0.3799
L1 1.910 2.280 0.0752 0.0898
L2 0.890 1.270 0.0350 0.0500
L3 1.150 1.520 0.0453 0.0598

2204201445_Slkor-SL5304DCP_C2999971.pdf

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