Low Gate Charge 100V N Channel MOSFET SP010N07AGTD for Power Switching and High Current Applications
Key Attributes
Model Number:
SP010N07AGTD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
90A
RDS(on):
6.4mΩ@10V;8.4mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
388pF
Input Capacitance(Ciss):
1.942nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
SP010N07AGTD
Package:
TO-263-3L
Product Description
Product Overview
The SP010N07AGTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. It is designed for power switching applications, battery management, and uninterruptible power supplies. The MOSFET has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N07AG
- Package: TO-263
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 100 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 6.4 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | @4.5V | 8.4 | m | ||
| Continuous Drain Current | ID | 90 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25unless otherwise noted) | 20 | V | ||
| Continuous Drain Current (Tc=25) | ID | 90 | A | |||
| Continuous Drain Current (Tc=100) | ID | 60 | A | |||
| Pulsed Drain Current | IDM | 360 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 306 | mJ | ||
| Power Dissipation (Tc=25) | PD | 130 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.96 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.0 | 1.7 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 6.4 | 8 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 25A | - | 8.4 | 11.5 | m |
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1942 | - | pF |
| Output Capacitance | Coss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 388 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 12 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 67 | - | nC |
| Gate-Source Charge | Qgs | VDS=50V , VGS=10V , ID=50A | - | 12 | - | nC |
| Gate-Drain Charge | Qgd | VDS=50V , VGS=10V , ID=50A | - | 21 | - | nC |
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=50A RG = 4.7 | - | 12 | - | nS |
| Rise Time | tr | VGS = 10V, VDS =50V, ID=50A RG = 4.7 | - | 11 | - | nS |
| Turn-Off Delay Time | td(off) | VGS = 10V, VDS =50V, ID=50A RG = 4.7 | - | 42 | - | nS |
| Fall Time | tf | VGS = 10V, VDS =50V, ID=50A RG = 4.7 | - | 6 | - | nS |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 90 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 59 | - | nS |
| Reverse Recovery Charge | Qrr | IS=20A, di/dt=100A/us, TJ=25 | - | 88 | - | nC |
Package Information (TO-263)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| 0 | 8 | 0 | 8 | |
| V | 5.600 REF. | 0.220 REF. |
Note: 1. The EAS test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25
Marking: 010N07AG : Product code, ** : Week code
Order Information: Device: SP010N07AGTD, Package: TO-263, Unit/Tape: 800
2504101957_Siliup-SP010N07AGTD_C22466793.pdf
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