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quality High Current NPN Transistor Slkor 2SC2712-G with Low Noise and Excellent Amplification Characteristics factory
quality High Current NPN Transistor Slkor 2SC2712-G with Low Noise and Excellent Amplification Characteristics factory

High Current NPN Transistor Slkor 2SC2712-G with Low Noise and Excellent Amplification Characteristics

Key Attributes
Model Number: 2SC2712-G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Transition Frequency(fT):
80MHz
Number:
1 NPN
Type:
NPN
Vce Saturation(VCE(sat)):
250mV@100mA,10mA
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SC2712-G
Package:
SOT-23
Product Description

Product Overview

The 2SC2712 is a NPN transistor designed for high voltage and high current applications, offering excellent hFE linearity and a high DC current gain. It features low noise characteristics, making it suitable for various electronic circuits requiring reliable amplification and switching. Available in multiple hFE classifications (O, Y, G, L), this transistor is packaged in a compact SOT-23 outline.

Product Attributes

  • Brand: slkormicro
  • Model Number: 2SC2712
  • Transistor Type: NPN
  • Package Type: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta = 25 unless otherwise noted)
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Base current IB 30 mA
Collector power dissipation Pc 150 mW
Junction temperature Tj 150
Storage temperature Tstg -55 125
Electrical Characteristics (Ta = 25)
Collector-base breakdown voltage VCBO Ic= 100 A, IE= 0 60 V
Collector-emitter breakdown voltage VCEO Ic= 1 mA, IB= 0 50 V
Emitter-base breakdown voltage VEBO IE= 100A, IC= 0 5 V
Collector-base cut-off current ICBO VCB= 60 V, IE= 0 100 nA
Emitter cut-off current IEBO VEB= 5V, IC=0 100 nA
Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA 0.25 V
Base-emitter saturation voltage VBE(sat) IC=100 mA, IB=10mA 1.2 V
DC current gain hFE VCE=6V, IC=2mA 70 700
Noise figure NF VCE = 6 V, IC = 0.1 mA, f = 1KHz,RG=10K 1 10 dB
Collector output capacitance Cob VCB=10V, IE=0,f=1MHz 2 3.5 pF
Transition frequency fT VCE=10V, IC=1mA 80 MHz
hFE Classification
Type Range Marking
2SC2712-O 70-140 LO
2SC2712-Y 120-240 LY
2SC2712-G 200-400 LG
2SC2712-L 350-700 LL
Dimensions (mm)
A A1 b c D E e
1.1 0.9 0.48 0.15 3.0 2.8 1.9
0.9 0.38 0.09 2.8 2.5 2.1
HE Lp Q w v
0.45 0.95 0.1 0.55 0.45
0.15 0.2 0.45 0.1

2311032123_Slkor-2SC2712-G_C19188364.pdf

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