Durable power MOSFET Slkor SL90N03D featuring trench technology and enhanced switching capabilities
Key Attributes
Model Number:
SL90N03D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
RDS(on):
7mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
90W
Output Capacitance(Coss):
268pF
Input Capacitance(Ciss):
2.3nF
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SL90N03D
Package:
TO-252
Product Description
Product Overview
This Power MOSFET utilizes advanced TRENCH technology, engineered to minimize conduction losses, deliver superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is ideal for PWM applications, load switching, and power management scenarios.
Product Attributes
- Brand: SLKORMicro
- Model: SL90N03D
- Technology: Advanced TRENCH
- Testing: 100% avalanche tested
- Capability: Improved dv/dt
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain-source Voltage | VDS | 30 | V | VGS=0V, ID=250A |
| Gate-source Voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | 90 | A | TC=25 |
| TC=100 | 58 | |||
| Pulsed Drain Current | IDM | 360 | A | TC=25, Tp Limited By Tjmax (note1) |
| Maximum Power Dissipation | PD | 90 | W | TC=25 |
| Avalanche energy, single Pulse | EAS | 90 | mJ | L=0.5mH (note2) |
| Operating Junction And Storage Temperature | Tj,Tstg | -55 To 150 | ||
| Maximum lead temperature for soldering | TL | 300 | 1/8" from case for 5 seconds | |
| Junction-to-Case Thermal Resistance | RJC | 1.67 | /W | Max |
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250A |
| Zero gate voltage drain current | IDSS | 1 | A | VDS=30V, VGS=0V |
| 10 | A | VDS=24V, TC =125 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Gate threshold voltage | VGS(th) | 1.0 - 2.5 | V | VDS=VGS, ID=250A |
| Drain-source on-state resistance | RDS(on) | 3.6 - 4.5 | m | VGS=10V, ID=30A |
| 5.2 - 7.0 | m | VGS=4.5V, ID=20A | ||
| Input Capacitance | Ciss | 2300 | PF | VGS=0V, VDS=15V, f=1.0MHz |
| Output Capacitance | Coss | 268 | PF | VGS=0V, VDS=15V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | 227 | PF | VGS=0V, VDS=15V, f=1.0MHz |
| Turn-on delay time | td(on) | 13 | nS | VDD=30V, ID=25A RG=25 |
| Turn-on Rise time | tr | 36 | nS | VDD=30V, ID=25A RG=25 |
| Turn-off delay time | td(off) | 43 | nS | VDD=30V, ID=25A RG=25 |
| Turn-off Fall time | tf | 16 | nS | VDD=30V, ID=25A RG=25 |
| Gate Total Charge | QG | 42 | nC | VGS=10V, VDS=15V, ID=30A |
| Gate-Source Charge | QgS | 4 | nC | VGS=10V, VDS=15V, ID=30A |
| Gate-Drain Charge | Qg d | 14 | nC | VGS=10V, VDS=15V, ID=30A |
| Body Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, ISD=30A |
| Body Diode Forward Current | Is | 90 | A | |
| Body Diode Reverse Recovery Time | Trr | 16 | ns | TJ=25ISD=20A, VGS=0V di/dt =100A/s |
| Body Diode Reverse Recovery Charge | Qrr | 5 | nC | TJ=25ISD=20A, VGS=0V di/dt =100A/s |
2405291447_Slkor-SL90N03D_C22446792.pdf
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