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quality Surface mount 60V MOSFET Siliup SP7284KCTW featuring 2KV ESD protection suitable for power and current handling applications factory
quality Surface mount 60V MOSFET Siliup SP7284KCTW featuring 2KV ESD protection suitable for power and current handling applications factory

Surface mount 60V MOSFET Siliup SP7284KCTW featuring 2KV ESD protection suitable for power and current handling applications

Key Attributes
Model Number: SP7284KCTW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA;130mA
RDS(on):
1.6Ω@10V;4.2Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
28pF
Pd - Power Dissipation:
0.15mW
Mfr. Part #:
SP7284KCTW
Package:
SOT-363
Product Description

Product Overview

The SP7284KCTW is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection of 2KV. It is suitable for applications such as battery switches and DC/DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP7284KCTW
  • Package: SOT-363
  • Marking: 75

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Value P-Channel Conditions P-Channel Value Units
Drain-Source Voltage V(BR)DSS 60 -60 V
RDS(on) RDS(on) VGS=10V, ID=250mA 1.6 TYP VGS=-10V, ID=-100mA 4.2 TYP
VGS=4.5V, ID=250mA 1.8 TYP VGS=-4.5V, ID=-100mA 4.5 TYP
Continuous Drain Current ID 340mA -130mA mA
Power Dissipation PD 150 mW
Thermal Resistance RJA 833 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Gate-Source Voltage VGS 20 V
Pulsed Drain Current IDM N-Channel 1360mA P-Channel -520mA mA
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 60V MIN VGS=0V, ID=250A -60V MIN V
Drain-Source Leakage Current IDSS VDS=48V, VGS=0V 1A MAX VDS=-48V, VGS=0V -1A MAX A
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V 10A MAX VGS=20V, VDS=0V 10A MAX A
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.0 to 2.5V VDS=VGS, ID=-250A -1.0 to -2.5V V
Input Capacitance Ciss VDS=25V, VGS=0V, f=1MHz 28pF TYP VDS=-5V, VGS=0V, f=1MHz 30pF TYP pF
Output Capacitance Coss 10pF TYP 10pF TYP pF
Reverse Transfer Capacitance Crss 5pF TYP 5pF TYP pF
Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=300mA 1.7nC TYP VDS=-30V, VGS=-10V, ID=-0.15A 1.8nC TYP nC
Gate-Source Charge Qgs 0.35nC TYP 0.5nC TYP nC
Gate-Drain Charge Qgd 0.5nC TYP 0.18nC TYP nC
Turn-On Delay Time td(on) VDD=30V, VGS=10V, RG=25, ID=300mA 3nS TYP VDD=-15V, VGS=-10V, RG=50, ID=-0.15A 8.6nS TYP nS
Turn-On Rise Time tr 17nS TYP 20nS TYP nS
Turn-Off Delay Time td(off) 10nS TYP 14nS TYP nS
Turn-Off Fall Time tf 21nS TYP 77nS TYP nS
Diode Forward Voltage VSD VGS=0V, IS=1A, TJ=25 1.2V MAX VGS=0V, IS=-1A, TJ=25 -1.2V MAX V
Package Dimensions (mm) A 0.90 - 1.00
A1 0.00 - 0.10
B 0.10 - 0.30
b1 1.30
D 1.80 - 2.20
E 2.00 - 2.20
E1 1.15 - 1.35
e 0.65 TYP.
L 0.10 - 0.25
L1 0.15 - 0.4

2504101957_Siliup-SP7284KCTW_C41354835.pdf

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