Silkor MJD127D Silicon PNP Darlington Power Transistor Designed for Operation in Amplifier Circuits

Key Attributes
Model Number: MJD127D
Product Custom Attributes
Mfr. Part #:
MJD127D
Package:
TO-252
Product Description

Product Overview

The MJD127D is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, high DC current gain, and is 100% avalanche tested for robust device performance and reliable operation. The lead is formed for surface mount applications.

Product Attributes

  • Brand: SLKORMICRO (implied by URL)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
ABSOLUTE MAXIMUM RATINGS (Ta=25)
VCBO Collector-Base Voltage -100 V
VCEO Collector-Emitter Voltage -100 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -8 A
PC Total Power Dissipation @ Ta=25 1.75 W
PC Collector Power Dissipation TC=25 20 W
Rth j-a Thermal Resistance, Junction to Ambient 71.4 /W
TJ Junction Temperature 150
Tstg Storage Temperature Range -55 ~ 150
ELECTRICAL CHARACTERISTICS (TC=25 unless otherwise specified)
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -100 V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-4A; IB= -16mA -2.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-8A; IB= -80mA -4.0 V
VBE(sat) Base-Emitter Saturation Voltage IC=-8A; IB= -80mA -4.5 V
VBE(ON) Base-Emitter voltage IC= -4A; VCE= -4V -2.8 V
ICEO Collector Cutoff Current VCE=-50V; IE= 0 -10 uA
IEBO Emitter Cutoff Current VEB=-5V; IC= 0 -2 mA
hFE1 DC Current Gain IC= -4A; VCE=- 4V 1000 12000
hFE2 DC Current Gain IC=-8A; VCE= -4V 100
fT Current-GainBandwidth Product IC=-3A; VCE= -4V 4 MHz
COB Output Capacitance IE=0; VCB= -10V; f= 1.0MHz 300 pF

2409302301_Slkor-MJD127D_C5155435.pdf

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