Power management P channel Trench MOSFET Slkor SL4041 featuring low RDS ON and gate charge performance
Key Attributes
Model Number:
SL4041
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
55pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
420pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
SL4041
Package:
SOT-23-3
Product Description
Product Overview
The SL4041 is a high-performance P-channel Trench MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability.
Product Attributes
- Brand: SLKORMicro
- Certifications: RoHS, Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.03 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-3A | --- | 30 | 40 | m |
| VGS=-4.5V , ID=-1A | --- | 40 | 58 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.8 | -1.2 | -2.2 | V |
| VGS(th) | VGS(th) Temperature Coefficient | VGS=VDS , ID =-250uA | --- | 4.56 | --- | mV/ |
| IDSS | Drain-Source Leakage Current | VDS=-28V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=-28V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | --- | 15 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 3.8 | --- | |
| Qg | Total Gate Charge | VDS=-18V , VGS=-10V , ID=-4A | --- | 9.5 | --- | nC |
| Qgs | Gate-Source Charge | VDS=-18V , VGS=-10V , ID=-4A | --- | 1.7 | --- | nC |
| Qgd | Gate-Drain Charge | VDS=-18V , VGS=-10V , ID=-4A | --- | 2.0 | --- | nC |
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=6, ID=-1A , RL=15 | --- | 8 | --- | ns |
| Tr | Rise Time | VDD=-15V , VGS=-10V , RG=6, ID=-1A , RL=15 | --- | 10 | --- | ns |
| Td(off) | Turn-Off Delay Time | VDD=-15V , VGS=-10V , RG=6, ID=-1A , RL=15 | --- | 18 | --- | ns |
| Tf | Fall Time | VDD=-15V , VGS=-10V , RG=6, ID=-1A , RL=15 | --- | 8 | --- | ns |
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 420 | --- | pF |
| Coss | Output Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 77 | --- | pF |
| Crss | Reverse Transfer Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 55 | --- | pF |
| EAS | Single Pulse Avalanche Energy | VDD=-25V , L=0.1mH , IAS=-8A | 10 | --- | --- | mJ |
| IS | Continuous Source Current | --- | --- | -1.0 | A | |
| ISM | Pulsed Source Current | VG=VD=0V , Force Current | --- | --- | -16 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -6.0 | A | |||
| 1 | ||||||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -4.5 | A | |||
| 1 | ||||||
| IDM | Pulsed Drain Current | 2 | -24 | A | ||
| EAS | Single Pulse Avalanche Energy | 3 | 12 | mJ | ||
| IAS | Avalanche Current | -7 | A | |||
| PD@TC=25 | Total Power Dissipation | 4 | 1.4 | W | ||
| TSTG | Storage Temperature Range | -55 | to | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | to | 150 | ||
| RJA | Thermal Resistance Junction-Ambient | 1 | --- | 125 | /W | |
| RJC | Thermal Resistance Junction-Case | 1 | --- | 36 | /W |
2208041800_Slkor-SL4041_C5122631.pdf
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