20V N Channel MOSFET Siliup SP2102CT3 Featuring Low On Resistance and High Current Handling in SOT 323
Key Attributes
Model Number:
SP2102CT3
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
1.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@4.5V;70mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Output Capacitance(Coss):
35pF
Pd - Power Dissipation:
280mW
Input Capacitance(Ciss):
226pF
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
SP2102CT3
Package:
SOT-323
Product Description
Product Overview
The SP2102CT3 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It offers high power and current handling capabilities in a surface mount SOT-323 package. Key applications include battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co., Ltd.
- Product Code: SP2102CT3
- Channel Type: N-Channel MOSFET
- Package: SOT-323
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 20 | V | |||
| On-Resistance (Typ.) | RDS(on) | @4.5V | 60 | m | ||
| On-Resistance (Typ.) | RDS(on) | @2.5V | 70 | m | ||
| Continuous Drain Current | ID | 1.8 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 10 | V | |||
| Continuous Drain Current | ID | 1.8 | A | |||
| Pulse Drain Current | IDM | Tested | 7.2 | A | ||
| Power Dissipation | PD | 280 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 446 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.5 | 0.7 | 1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=1A | - | 60 | 80 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=1A | - | 70 | 110 | m |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 226 | - | pF |
| Output Capacitance | Coss | - | 35 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 21 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=1.8A | - | 4.0 | - | nC |
| Gate-Source Charge | Qgs | - | 0.85 | - | ||
| Gate-Drain Charge | Qgd | - | 0.67 | - | ||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=6 , ID=1.8A | - | 7 | - | nS |
| Turn-On Rise Time | tr | - | 55 | - | ||
| Turn-Off Delay Time | td(off) | - | 14 | - | ||
| Turn-Off Fall Time | tf | - | 43 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-323 Package Information | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.100 | 0.035 - 0.043 | ||||
| A1 | 0.000 - 0.100 | 0.000 - 0.004 | ||||
| A2 | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| c | 0.080 - 0.150 | 0.003 - 0.006 | ||||
| D | 2.000 - 2.200 | 0.079 - 0.087 | ||||
| E | 1.150 - 1.350 | 0.045 - 0.053 | ||||
| E1 | 2.000 - 2.450 | 0.085 - 0.096 | ||||
| e | 0.650 TYP. | 0.026 TYP. | ||||
| e1 | 1.200 - 1.400 | 0.047 - 0.055 | ||||
| L | 0.525 REF. | 0.021 REF. | ||||
| L1 | 0.260 - 0.460 | 0.010 - 0.018 | ||||
| 0 - 8 | 0 - 8 | |||||
2504101957_Siliup-SP2102CT3_C41354905.pdf
Related Products
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
