PNP Transistor Suzhou Good-Ark Elec GSBC807-40W Featuring SOT-323 Package and Automatic Insertion Design

Key Attributes
Model Number: GSBC807-40W
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Vce Saturation(VCE(sat)):
700mV@500mA,50mA
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
GSBC807-40W
Package:
SOT-323
Product Description

Product Overview

The GSBC807W is a PNP Transistor housed in a SOT-323 small outline plastic package. It is designed for automatic insertion and features an epitaxial planar die construction. This transistor is suitable for various electronic applications requiring PNP functionality.

Product Attributes

  • Brand: GSBC (implied by product code)
  • Package Type: SOT-323
  • Construction: Epitaxial planar die
  • Insertion: Ideally for automatic insertion

Technical Specifications

ParameterSymbolConditionsMin.Max.Unit
Collector-Base Breakdown VoltageV(BR)CBOIC=-10A, IE=0-50-V
Collector-Emitter Breakdown VoltageV(BR)CEOIC=-10mA, IB=0-45-V
Emitter-Base Breakdown VoltageV(BR)EBOIE=-1A, IC=0-5-V
Collector Cut-Off CurrentICBOVCB=-20V, IE=0--100nA
Emitter Cut-Off CurrentIEBOVEB=-5V, IC=0--100nA
DC Current Gain (hFE)hFE(1)VCE=-1V, IC=-100mA100600
DC Current Gain (hFE)hFE(2)VCE=-1V, IC=-500mA40-
Collector-Emitter Saturation VoltageVCE(sat)IC=-500mA, IB=-50mA--0.70V
Base-Emitter VoltageVBE(on)VCE=-1V, IC=-500mA--1.20V
Transition FrequencyfTVCE=-5V, IC=-10mA, f=100MHz80-MHz
Collector Output CapacitanceCobVCB=-10V, IE=0, f=100MHz-10pF
Collector Power DissipationPC(TA=25C unless otherwise specified)-200mW
Thermal Resistance Junction To AmbientRJA-625C/W
Storage TemperatureTSTG-55+150C
Junction TemperatureTJ-55+150C

2411201840_Suzhou-Good-Ark-Elec-GSBC807-40W_C19841083.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.