Surface Mount P Channel MOSFET Slkor SL2301 Featuring Low On Resistance and High Current Capability

Key Attributes
Model Number: SL2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
112mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SL2301
Package:
SOT-23
Product Description

Product Overview

This P-Channel Power MOSFET offers high power and current handling capability with low on-resistance characteristics. It is designed for surface mount applications and is lead-free. Ideal for DC/DC converters and load switch applications.

Product Attributes

  • Brand: SLKORMicro
  • Certifications: Lead free product is acquired
  • Package: SOT-23

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDS-20V
Gate-Source VoltageVGS12V
Drain Current-ContinuousID-2.8A
Drain Current -Pulsed (Note 1)IDM-10A
Maximum Power DissipationPD0.4W
Operating Junction and Storage Temperature RangeTJ,TSTG-55150
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)RJA312.5/W
Electrical Characteristics
Off Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=-250A-20V
Zero Gate Voltage Drain CurrentIDSSVDS=-20V,VGS=0V-1A
Gate-Body Leakage CurrentIGSSVGS=8V, V DS=0V100nA
On Characteristics (Note 3)
Gate Threshold VoltageVGS(th)VDS=VGS,ID=-250A-0.4-1V
Drain-Source On-State ResistanceRDS(ON)VGS=-4.5V, ID=-2.8A90112m
VGS=-2.5V, ID=-2.0A110142m
Forward TransconductancegFSVDS=-5V,ID=-2.8A6.5S
Dynamic Characteristics (Note4)
Input CapacitanceClss405PF
Output CapacitanceCoss75PF
Reverse Transfer CapacitanceCrssVDS=-10V,VGS=0V, F=1.0MHz55PF
Switching Characteristics (Note 4)
Turn-on Delay Timetd(on)1120nS
Turn-on Rise Timetr3560nS
Turn-Off Delay Timetd(off)3050nS
Turn-Off Fall Timetf1020nS
Total Gate ChargeQg5.510nC
Gate-Source ChargeQgs3.36nC
Gate-Drain ChargeQg dVDS=-10V,ID=-3A, VGS=-4.5V1.3nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)VSDVGS=0V,IS=-0.7A-0.8-1.2V
Diode Forward Current (Note 2)IS-1.3A

1811101430_Slkor-SL2301_C251149.pdf

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