NPN Darlington Transistor Slkor TIP122 for Power Amplifier and Low Speed Switching Electronic Circuits
Key Attributes
Model Number:
TIP122
Product Custom Attributes
Current - Collector Cutoff:
200uA
DC Current Gain:
1000
Transition Frequency(fT):
-
Vce Saturation(VCE(sat)):
4V
Type:
NPN
Pd - Power Dissipation:
65W
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-65℃~+150℃@(Tj)
Mfr. Part #:
TIP122
Package:
TO-220
Product Description
Product Overview
The TIP120, TIP121, and TIP122 are NPN Darlington power transistors designed for general-purpose amplifier and low-speed switching applications. These RoHS Compliant devices offer robust performance for various electronic circuits.
Product Attributes
- RoHS Compliant
Technical Specifications
| Model | Description | Unit | Conditions | Min. | Max. |
|---|---|---|---|---|---|
| TIP120/TIP121/TIP122 | Collector-Base Voltage (VCBO) | V | 60/80/100 | ||
| Collector-Emitter Voltage (VCEO) | V | 60/80/100 | |||
| Emitter-Base Voltage (VEBO) | V | 5.0 | |||
| TIP120/TIP121/TIP122 | Collector Current Continuous (IC) | A | 5.0 | ||
| Collector Current Peak (ICM) | A | 8.0 | |||
| TIP120/TIP121/TIP122 | Base Current (IB) | mA | 120 | ||
| TIP120/TIP121/TIP122 | Power Dissipation (PD) upto TC=25C | W | 65 | ||
| Power Dissipation Derate above TC=25C | W/ C | 0.52 | |||
| Power Dissipation (PD) upto TA=25C | W | 2.0 | |||
| Power Dissipation Derate above TA=25C | mW/ C | 16 | |||
| TIP120/TIP121/TIP122 | Thermal Resistance Junction to Ambient (RJA) in Free Air | C /W | 62.5 | ||
| TIP120/TIP121/TIP122 | Thermal Resistance Junction to Case (RJC) | C /W | 1.92 | ||
| TIP120/TIP121/TIP122 | Operating Junction and Storage Temperature Range (TJ, TSTG) | C | -65 | +150 | |
| TIP120 | Collector-Emitter Sustaining Voltage (VCEO(sus)) | V | 60 | ||
| TIP121 | Collector-Emitter Sustaining Voltage (VCEO(sus)) | V | 80 | ||
| TIP122 | Collector-Emitter Sustaining Voltage (VCEO(sus)) | V | 100 | ||
| TIP120/TIP121/TIP122 | D.C. Current Gain (*hFE) | - | VCE=3V, IC=0.5A | 1000 | |
| D.C. Current Gain (*hFE) | - | VCE=3V, IC=3A | 1000 | ||
| Collector-Emitter Saturation Voltage (VCE(sat)) | V | IC=3A, IB=12mA | 2.0 | ||
| TIP120/TIP121/TIP122 | Collector-Emitter Saturation Voltage (VCE(sat)) | V | IC=5A, IB=20mA | 4.0 | |
| TIP120/TIP121/TIP122 | Base-Emitter On Voltage (VBE(on)) | V | IC=3A, VCE=3V | 2.5 | |
| TIP120 | Collector-Emitter Cut-off Current (ICEO) | mA | VCE=30V, IB=0 | 0.5 | |
| TIP121 | Collector-Emitter Cut-off Current (ICEO) | mA | VCE=40V, IB=0 | 0.5 | |
| TIP122 | Collector-Emitter Cut-off Current (ICEO) | mA | VCE=50V, IB=0 | 0.5 | |
| TIP120 | Collector-Base Cut-off Current (ICBO) | mA | VCB=60V, IE=0 | 0.2 | |
| TIP121 | Collector-Base Cut-off Current (ICBO) | mA | VCB=80V, IE=0 | 0.2 | |
| TIP122 | Collector-Base Cut-off Current (ICBO) | mA | VCB=100V, IE=0 | 0.2 | |
| TIP120/TIP121/TIP122 | Emitter-Base Cut-off Current (IEBO) | mA | VEB=5V, IC=0 | 2 | |
| TIP120/TIP121/TIP122 | Small Signal Current Gain (hfe) | - | IC=3A, VCE=4V, f=1.0MHz | 4.0 | |
| TIP120/TIP121/TIP122 | Output Capacitance (Cob) | pF | VCB=10V, IE=0, f=0.1MHz | 200 | |
| TIP120/TIP121/TIP122 | Turn on time (ton) | S | IC=3A, RL=10, IB1=IB2=12mA, VEB(off)=5V | 0.4 | |
| TIP120/TIP121/TIP122 | Turn off time (toff) | S | IC=3A, RL=10, IB1=IB2=12mA, VEB(off)=5V | 1.2 |
*Pulse Test: Pulse Width300s, Duty Cycle2%
1912111437_Slkor-TIP122_C458982.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
