ROHS compliant MOSFET Siliup SP3012CNK 30V designed for surface mount and motor control applications
Key Attributes
Model Number:
SP3012CNK
Product Custom Attributes
Pd - Power Dissipation:
18W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
24A;18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;16mΩ@4.5V;21mΩ@10V;30mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
109pF;142pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
131pF;146pF
Input Capacitance(Ciss):
940pF;1.07nF
Gate Charge(Qg):
9.6nC@4.5V;21nC@10V
Mfr. Part #:
SP3012CNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP3012CNK is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, it offers fast switching speeds and is ROHS Compliant & Halogen-Free. This MOSFET is 100% tested for single pulse avalanche energy. It is ideal for use in DC-DC converters and motor control applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Rating | P-Channel Conditions | P-Channel Rating | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | -30 | V | ||
| Gate-Source Voltage | VGS | 20 | 20 | V | ||
| Continuous Drain Current (Tc=25C) | ID | 24 | -18 | A | ||
| Pulse Drain Current Tested | IDM | 96 | -72 | A | ||
| Single pulsed avalanche energy | EAS | 49 | 64 | mJ | ||
| Power Dissipation (Tc=25C) | PD | 18 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 6.9 | C/W | |||
| Storage Temperature Range | TSTG | -55 to 150 | C | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | VGS=0V , ID=-250uA | -30 | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | 1 | VDS=-24V , VGS=0V , TJ=25 | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | VGS=20V , VDS=0V | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 - 2.5 | VGS=VDS , ID =-250uA | -1.0 - -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 8A | 11 - 15 | VGS =-10V, ID =-6A | 21 - 27 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 4.5V, ID = 6A | 16 - 21 | VGS =-4.5V, ID =-4A | 30 - 40 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | 940 | VDS=-15V , VGS=0V , f=1MHz | 1070 | pF |
| Output Capacitance | Coss | 131 | 146 | pF | ||
| Reverse Transfer Capacitance | Crss | 109 | 142 | pF | ||
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | 9.6 | VDS=-30V , VGS=-10V , ID=-6A | 21 | nC |
| Gate-Source Charge | Qgs | 3.9 | 2.1 | nC | ||
| Gate-Drain Charge | Qg | 3.4 | 5.6 | nC | ||
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | 4.2 | VDD=-15V VGS=-10V , RG=6, ID=-1A | 7 | nS |
| Rise Time | Tr | 8.2 | 9 | nS | ||
| Turn-Off Delay Time | Td(off) | 31 | 30 | nS | ||
| Fall Time | Tf | 4 | 18 | nS | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | 24 | -18 | A | ||
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | 1.2 | IS=-20A, di/dt=-100A/us, Tj=25 | 50 | nS |
| Reverse recovery charge | Qrr | 9 | 31 | nC |
| PDFN5X6-8L Package Information | |||
|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | |
| A | 0.900 - 1.000 | 0.035 - 0.039 | |
| A3 | 0.254 REF. | 0.010 REF. | |
| D | 4.944 - 5.096 | 0.195 - 0.201 | |
| E | 5.974 - 6.126 | 0.235 - 0.241 | |
| D1 | 1.470 - 1.870 | 0.058 - 0.074 | |
| D2 | 0.470 - 0.870 | 0.019 - 0.034 | |
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | |
| D3 | 4.824 - 4.976 | 0.190 - 0.196 | |
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | |
| k | 1.190 - 1.390 | 0.047 - 0.055 | |
| b | 0.350 - 0.450 | 0.014 - 0.018 | |
| e | 1.270 TYP. | 0.050 TYP. | |
| L | 0.559 - 0.711 | 0.022 - 0.028 | |
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | |
| H | 0.574 - 0.726 | 0.023 - 0.029 | |
| 10 - 12 | 10 - 12 | ||
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP3012CNK | PDFN5X6-8L | 5000 |
Circuit Diagram Marking: 3012C :Device Code
2504101957_Siliup-SP3012CNK_C42372337.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
