Load Switching and Power Management Using Slkor SL2318 N Channel MOSFET with Low Gate Source Voltage

Key Attributes
Model Number: SL2318
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-40℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
30pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
340pF@20V
Pd - Power Dissipation:
1.56W
Gate Charge(Qg):
5.8nC@20V
Mfr. Part #:
SL2318
Package:
SOT-23
Product Description

Product Overview

The SL2318 is an N-Channel Advanced Power MOSFET designed for efficient load switching, DC/DC conversion, and general switching circuit applications. It features low RDS(on) at 10V gate-source voltage and 4.5V logic-level control, housed in a compact SOT23 package. This Pb-free and RoHS compliant device offers reliable performance for power management tasks.

Product Attributes

  • Brand: SLKORMicro
  • Package: SOT23
  • Certifications: PbFree, RoHS Compliant

Technical Specifications

Part NumberV(BR)DSS (V)RDS(ON) Typ (m @ VGS)ID Max (A @ TA)PackageMarkingPackingMin Unit Quantity
SL23184029 @ 10V, 36 @ 4.5V4.1A @ 25CSOT23SL2318Reel3000
SymbolParameterConditionMinTypMaxUnit
Common Ratings (TA=25C Unless Otherwise Noted)
VGSGate-Source Voltage20V
(BR)DSSDrain-Source Breakdown Voltage40V
TJMaximum Junction Temperature150C
TSTGStorage Temperature Range-50150C
IDPulse Drain Current TestedTA=25C22.6A
IDContinuous Drain CurrentTA=25C4.1A
IDContinuous Drain CurrentTA=70C3.2A
PDMaximum Power DissipationTA=25C1.56W
PDMaximum Power DissipationTA=70C0.9W
RJAThermal Resistance Junction-AmbientMounted on Large Heat Sink80C/W
Static Electrical Characteristics @ TJ = 25C (unless otherwise stated)
V(BR)DSSDrain-Source Breakdown VoltageVGS=0V, ID=250A40V
IDSSZero Gate Voltage Drain CurrentVDS=40V, VGS=0V (TA=25)1A
IDSSZero Gate Voltage Drain CurrentVDS=40V, VGS=0V (TA=125)100uA
IGSSGate-Body Leakage CurrentVGS=20V, VDS=0V100nA
VGS(TH)Gate Threshold VoltageVDS=VGS, ID=250A0.71.22.0V
RDS(ON)Drain-Source On-State ResistanceVGS=10V, ID=5A2938m
RDS(ON)Drain-Source On-State ResistanceVGS=4.5V, ID=4A3652m
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated)
CissInput CapacitanceVDS=20V, VGS=0V, f=1MHz340pF
CossOutput Capacitance60pF
CrssReverse Transfer Capacitance30pF
RgGate Resistancef=1MHz7.8
QgTotal Gate ChargeVDS=20V ID=5A, VGS=10V5.8nC
Qg sGate Source Charge0.4nC
Qg dGate Drain Charge2nC
Switching Characteristics @ TJ = 25C (unless otherwise stated)
td(on)Turn on Delay TimeVDD=20V, ID=3.5A, RG=1, VGS=4.5V4.1ns
trTurn on Rise Time11.6ns
td(off)Turn Off Delay Time24ns
tfTurn Off Fall Time7.6ns
Source Drain Diode Characteristics @ TJ = 25C (unless otherwise stated)
ISDSource drain current(Body Diode)TA=251.75A
VSDForward on voltageTj=25, ISD=3.5A, VGS=0V0.791.2V

2410121549_Slkor-SL2318_C5122630.pdf

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